Semiconductor device

• US 20060267138A1
• Filed: 05/22/2006
• Published: 11/30/2006
• Est. Priority Date: 05/30/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kobayashi, Hidetomo
• Granted Patent: US 7,688,272 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01Q 1/2225 used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal

Abstract

An object is to provide a semiconductor device having an antenna structure which is advantageous for miniaturization, without changing the number of steps and communication distance. One feature to achieve the above object is a semiconductor device including a substrate, a tag portion including a thin film element formed over the substrate, a first antenna, and a second antenna, in which the first antenna and the second antenna are formed in different layers separated by an insulating film, the first antenna and the second antenna are partially electrically connected to each other, the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the thin film element, and the second antenna is formed in a different layer from the source or drain wiring connected to the thin film element.

Claims

1. A semiconductor device comprising:

a substrate;

a circuit including a thin film element formed over the substrate;

a first antenna; and

a second antenna,

wherein the first antenna and the second antenna are formed in different layers separated by an insulating film,

the first antenna and the second antenna are partially electrically connected to each other,

the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the thin film element, and

the second antenna is formed in a different layer from the source or drain wiring connected to the thin film element.

3. A semiconductor device according to claim 1, wherein the thin film element includes a thin film transistor including a semiconductor layer, a gate insulating film, and a gate electrode,

the circuit is electrically connected to the first antenna, and

a wiring connecting the circuit and the first antenna is formed of the same material and in the same layer as the gate electrode of the thin film transistor.

5. A semiconductor device according to claim 3, wherein the gate electrode is formed using at least one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, copper, chromium, and niobium or an alloy or a compound containing one or a plurality of them.

7. A semiconductor device according to claim 1, wherein the first antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

9. A semiconductor device according to claim 1, wherein the second antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

11. A semiconductor device according to claim 1, wherein the first antenna is arranged to surround the circuit.

13. A semiconductor device according to claim 1, wherein the circuit is arranged outside the first antenna.

15. A semiconductor device according to claim 1, wherein the first antenna and the second antenna comprise resonance capacitor potions.

2. A semiconductor device comprising:

a substrate;

a circuit including a thin film element formed over the substrate;

a first antenna; and

a second antenna,

wherein the first antenna and the second antenna are formed in different layers separated by an insulating film,

the first antenna and the second antenna are partially electrically connected to each other,

the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the thin film element,

the second antenna is formed in a different layer from the source or drain wiring connected to the thin film element, and

the first antenna and the second antenna are formed so as not to overlap each other except in an intersecting portion and an electrically connecting portion when seen from a direction perpendicular to the substrate.

4. A semiconductor device according to claim 2, wherein the thin film element includes a thin film transistor including a semiconductor layer, a gate insulating film, and a gate electrode,

the circuit is electrically connected to the first antenna, and

a wiring connecting the circuit and the first antenna is formed of the same material and in the same layer as the gate electrode of the thin film transistor.

6. A semiconductor device according to claim 4, wherein the gate electrode is formed using at least one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, copper, chromium, and niobium or an alloy or a compound containing one or a plurality of them.

8. A semiconductor device according to claim 2, wherein the first antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

10. A semiconductor device according to claim 2, wherein the second antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

12. A semiconductor device according to claim 2, wherein the first antenna is arranged to surround the circuit.

14. A semiconductor device according to claim 2, wherein the circuit is arranged outside the first antenna.

16. A semiconductor device according to claim 2, wherein the first antenna and the second antenna comprise resonance capacitor potions.

17. A semiconductor device comprising:

a circuit including a transistor;

a first antenna; and

a second antenna,

wherein the first antenna and the second antenna are formed in different layers separated by an insulating film,

the first antenna and the second antenna are partially electrically connected to each other,

the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the transistor, and

the second antenna is formed in a different layer from the source or drain wiring connected to the transistor.

19. A semiconductor device according to claim 17, wherein the transistor includes a semiconductor layer, a gate insulating film, and a gate electrode,

the circuit is electrically connected to the first antenna, and

a wiring connecting the circuit and the first antenna is formed of the same material and in the same layer as the gate electrode of the thin film transistor.

21. A semiconductor device according to claim 19, wherein the gate electrode is formed using at least one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, copper, chromium, and niobium or an alloy or a compound containing one or a plurality of them.

23. A semiconductor device according to claim 17, wherein the first antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

25. A semiconductor device according to claim 17, wherein the second antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

27. A semiconductor device according to claim 17, wherein the first antenna is arranged to surround the circuit.

29. A semiconductor device according to claim 17, wherein the circuit is arranged outside the first antenna.

31. A semiconductor device according to claim 17, wherein the first antenna and the second antenna comprise resonance capacitor potions.

33. A semiconductor device according to claim 17, wherein the transistor is a thin film transistor.

18. A semiconductor device comprising:

a circuit including a transistor;

a first antenna; and

a second antenna,

wherein the first antenna and the second antenna are formed in different layers separated by an insulating film,

the first antenna and the second antenna are partially electrically connected to each other,

the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the transistor,

the second antenna is formed in a different layer from the source or drain wiring connected to the transistor, and

the first antenna and the second antenna are formed so as not to overlap each other except in an intersecting portion and an electrically connecting portion when seen from a direction perpendicular to the circuit.

20. A semiconductor device according to claim 18, wherein the transistor includes a semiconductor layer, a gate insulating film, and a gate electrode,

the circuit is electrically connected to the first antenna, and

a wiring connecting the circuit and the first antenna is formed of the same material and in the same layer as the gate electrode of the thin film transistor.

22. A semiconductor device according to claim 20, wherein the gate electrode is formed using at least one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, copper, chromium, and niobium or an alloy or a compound containing one or a plurality of them.

24. A semiconductor device according to claim 18, wherein the first antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

26. A semiconductor device according to claim 18, wherein the second antenna is formed using at least one selected from the group consisting of aluminum, nickel, tungsten, molybdenum, titanium, platinum, copper, tantalum, gold, and manganese or an alloy or a compound containing one or a plurality of them.

28. A semiconductor device according to claim 18, wherein the first antenna is arranged to surround the circuit.

30. A semiconductor device according to claim 18, wherein the circuit is arranged outside the first antenna.

32. A semiconductor device according to claim 18, wherein the first antenna and the second antenna comprise resonance capacitor potions.

34. A semiconductor device according to claim 18, wherein the transistor is a thin film transistor.