Self light-emitting device

• US 20060267483A1
• Filed: 08/09/2006
• Published: 11/30/2006
• Est. Priority Date: 10/29/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Konuma, Toshimitsu, Mizukami, Mayumi, Tsutsui, Tetsuo
• Granted Patent: US 8,110,983 B2
• Time in Patent Office: Days
• US Class Current: 313/501
• CPC Class Codes: G02F 1/133602 Direct backlight
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/8428 Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 59/8723 Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
• CPC Class Codes: H10K 59/875 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/878 comprising reflective means

Abstract

To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).

Claims

1-12. -12. (canceled)

13. A self light-emitting device comprising an EL element comprising:

an opaque electrode over a substrate;

an EL layer over the opaque electrode;

a transparent electrode over the EL layer;

an inert gas filled in a space between the transparent electrode and a cover material; and

spacers in the space,

wherein each of said EL layer and said transparent electrode has a film thickness (d), and

wherein said light generated in said EL layer is emitted to said cover material side.

14. The self light-emitting device according to claim 13, wherein said film thickness (d) satisfies a formula d≦

λ

/(4 n), when a light with a wavelength k generated by the EL layer passes through a medium with a refractive index n.

15. A self light-emitting device comprising an EL element comprising:

an opaque electrode over a substrate;

an EL layer over the opaque electrode;

a transparent electrode over the EL layer;

a buffer layer provided between said EL layer and said transparent electrode or between said EL layer and said opaque electrode, said buffer layer is provided for promoting injection and transportation of charges;

an inert gas filled in a space between the transparent electrode and a cover material; and

spacers in the space,

wherein each of said EL layer and said transparent electrode has a film thickness (d), and

wherein said light generated in said EL layer is emitted to said cover material side.

16. The self light-emitting device according to claim 15, wherein said film thickness (d) satisfies a formula d≦

λ

/(4 n), when a light with a wavelength ) generated by the EL layer passes through a medium with a refractive index n.

17. A self light-emitting device comprising an EL element comprising:

an opaque electrode over a substrate;

an EL layer over the opaque electrode;

a transparent electrode over the EL layer;

an inert gas filled in a space between the transparent electrode and a cover material; and

spacers in the space,

wherein each of said EL layer and said transparent electrode has a film thickness (d)

wherein said light generated in said EL layer is emitted to said cover material side, and

wherein the self light-emitting device further comprises a TFT over the substrate and said EL element electrically connected to the TFT.

18. The self light-emitting device according to claim 17, wherein said film thickness (d) satisfies a formula d≦

λ

/(4 n), when a light with a wavelength x generated by the EL layer passes through a medium with a refractive index n.

19. A self light-emitting device comprising an EL element comprising:

a plurality of opaque electrodes arranged in stripe shapes over a substrate;

an EL layer over the plurality of opaque electrodes;

a plurality of transparent electrodes arranged in stripe so as to be orthogonal to the plurality of opaque electrodes over the EL layer;

an inert gas filled in a space between the transparent electrode and a cover material; and

spacers in the space,

wherein each of said EL layer and said transparent electrode has a film thickness (d), and

wherein said light generated in said EL layer is emitted to said cover material side.

20. The self light-emitting device according to claim 19, wherein said film thickness (d) satisfies a formula d≦

λ

/(4 n), when a light with a wavelength λ

generated by the EL layer passes through a medium with a refractive index n.