Reactively formed integrated capacitors on organic substrates and fabrication methods
First Claim
1. A capacitor integrated onto a substrate or foil formed by:
- reacting a metal or precursor layer using a hydrothermal reaction, thermal oxidation or solid-state reaction with a deposited layer, to create a high dielectric constant film on the substrate that comprises the integrated capacitor.
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Abstract
Disclosed are organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates. Hydrothermal synthesis allows direct deposition of high-k films with capacitance density of about 1 μF/cm2 on organic substrates. This is done by reactively growing a high-k film from Ti foil/Ti-coated copper foil/Ti precursor-coated organic substrate in an alkaline barium ion bath. Alternatives may be used to address multiple coatings, low temperature baking, low temperature pyrolysis with oxygen plasma, etc. Sol-gel and RF-sputtering assisted by a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm2. Thermal oxidation of titanium foil/Ti-coated copper foil/Ti-coated organic substrate with a copper conductive layer is also a reactively grown high-k film process for integrating capacitance of hundreds of nF with or without using a foil transfer process.
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Citations
25 Claims
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1. A capacitor integrated onto a substrate or foil formed by:
reacting a metal or precursor layer using a hydrothermal reaction, thermal oxidation or solid-state reaction with a deposited layer, to create a high dielectric constant film on the substrate that comprises the integrated capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
Specification