Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
First Claim
1. A method of reducing threading dislocation densities in non-polar and semi-polar III-Nitride material, comprising:
- (a) performing a lateral epitaxial overgrowth of non-polar or semi-polar III-Nitride material from sidewalls of etched template material through a patterned mask.
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Abstract
A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
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Citations
17 Claims
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1. A method of reducing threading dislocation densities in non-polar and semi-polar III-Nitride material, comprising:
(a) performing a lateral epitaxial overgrowth of non-polar or semi-polar III-Nitride material from sidewalls of etched template material through a patterned mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of reducing threading dislocation densities in epitaxially grown non-polar or semi-polar III-Nitride films, devices or substrates, comprising:
(a) performing a lateral epitaxial overgrowth of epitaxial material from sidewalls of etched template material through a patterned mask, comprising;
(1) forming the patterned mask on the template material;
(2) etching the template material through one or more openings in the patterned mask to form one or more trenches or pillars in the template material, the one or more trenches or pillars comprising the sidewalls, tops of the sidewalls and one or more bottoms; and
(3) growing and coalescing the epitaxial material laterally from the tops before epitaxial material vertically growing from the one or more bottoms reaches the tops;
(4) growing the epitaxial material vertically up through the one or more openings after the growing and coalescing step (3);
(5) growing the epitaxial material laterally over the patterned mask to form overgrown material which may form a continuous film, after the growing and coalescing step (3), wherein the growth in steps (3) and (5) is performed using a lateral overgrowth technique.
Specification