Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)

• US 20060270087A1
• Filed: 05/31/2006
• Published: 11/30/2006
• Est. Priority Date: 05/31/2005
• Status: Active Grant

• Current Assignee: Japan Science & Technology Trading Co. Limited
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Speck, James S., DenBaars, Steven P., Imer, Bilge M.
• Granted Patent: US 7,338,828 B2
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02516 Crystal orientation
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041

Abstract

A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AIN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.

Claims

1. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:

(a) growing non-polar m-{1-100} plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).

2. The method of claim 1, wherein the substrate comprises an m-silicon carbide (SiC) substrate.

3. The method of claim 1, wherein the non polar m-plane III-Nitride comprises m-plane gallium nitride (GaN).

4. The method of claim 1, further comprising performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface prior to the growing step.

5. The method of claim 1, further comprising annealing the substrate prior to the growing step.

6. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane Ill-Nitride on the nucleation layer.

7. The method of claim 1, wherein the nucleation layer comprises aluminum nitride (AIN).

8. The method of claim 1, further comprising:

(1) annealing the substrate;

(2) growing a nucleation layer on the substrate after the annealing step; and

(3) growing the non polar m-plane III-Nitride on the nucleation layer.

9. The method of claim 1, wherein the non-polar m-plane III-Nitride is a planar epitaxial layer.

10. A device, wafer, substrate or template fabricated using the method of claim 1.

11. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:

(a) growing non-polar m-plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), comprising;

(1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;

(2) annealing the substrate after performing the solvent clean and acid dip;

(3) growing a nucleation layer on the substrate after the annealing step; and

(4) growing a planar epitaxial layer of the non polar m-plane III-Nitride on the nucleation layer.