SENSOR SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

• US 20060270089A1
• Filed: 10/13/2005
• Published: 11/30/2006
• Est. Priority Date: 05/25/2005
• Status: Active Grant

• Current Assignee: Siliconware Precision Industries Co., Ltd. (ASE Technology Holding Co., Ltd.)
• Original Assignee: Siliconware Precision Industries Co., Ltd. (ASE Technology Holding Co., Ltd.)
• Inventors: Huang, Chih-Ming, Huang, Chien-Ping, Chang, Cheng-Yi
• Granted Patent: US 7,271,024 B2
• Time in Patent Office: Days
• US Class Current: 438/48
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/86 using tape automated bonding [TAB]
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/14 Integrated circuits

Abstract

A sensor semiconductor device and a method for fabricating the same are proposed. A plurality of metal bumps and a sensor chip are mounted on a substrate. A dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the metal bumps and the sensor chip. Thus, the sensor chip is electrically connected to the substrate via the circuit layer and the metal bumps. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. A plurality of solder balls are mounted on a surface of the substrate free of mounting the sensor chip, for electrically connecting the sensor chip to an external device.

Claims

1. A method for fabricating a sensor semiconductor device, comprising the steps of:

mounting a plurality of metal bumps and at least one sensor chip on at least one substrate, the sensor chip having an active surface and a corresponding non-active surface, wherein the active surface of the sensor chip is formed with a sensor region and a plurality of electrode pads, and the non-active surface of the sensor chip is attached to the substrate;

applying a dielectric layer on the substrate, the metal bumps and the sensor chip, wherein the dielectric layer is formed with a plurality of first openings corresponding in position to the metal bumps and the electrode pads of the sensor chip;

forming a circuit layer on the dielectric layer, wherein the circuit layer is electrically connected to the metal bumps and the electrode pads of the sensor chip;

forming a second opening in the dielectric layer at a position corresponding to the sensor region of the sensor chip; and

providing a light-penetrable lid to cover the second opening of the dielectric layer corresponding to the sensor region of the sensor chip.

2. The method of claim 1, further comprising a step of implanting a plurality of solder balls on a surface of the substrate free of mounting the sensor chip.

3. The method of claim 1, further comprising a step of performing a circuit build-up process on the circuit layer that is electrically connected to the metal bumps and the electrode pads of the sensor chip.

4. The method of claim 1, wherein the at least one substrate comprises at least one single substrate, a matrix of substrates, or a strip of substrates.

5. The method of claim 1, wherein the light-penetrable lid is mounted on the circuit layer to cover the second opening of the dielectric layer.

6. The method of claim 1, wherein the sensor semiconductor device is a chip-scale packaged sensor semiconductor device.

7. The method of claim 1, wherein the metal bumps are gold bumps or solder bumps.

8. The method of claim 1, wherein the light-penetrable lid made of glass or transparent paste.

9. A sensor semiconductor device, comprising:

at least one substrate having a first surface and a corresponding second surface;

a plurality of metal bumps mounted on the first surface of the substrate;

a sensor chip having an active surface and a corresponding non-active surface, wherein the active surface of the sensor chip is formed with a sensor region and a plurality of electrode pads, and the non-active surface of the sensor chip is mounted on the first surface of the substrate;

a dielectric layer applied on the substrate, the metal bumps and the sensor chip, wherein the dielectric layer is formed with a plurality of first openings corresponding in position to the metal bumps and the electrode pads of the sensor chip and a second opening corresponding in position to the sensor region of the sensor chip;

a circuit layer formed on the dielectric layer, and electrically connected to the metal bumps and the electrode pads of the sensor chip; and

a light-penetrable lid for covering the second opening of the dielectric layer corresponding to the sensor region of the sensor chip.

10. The sensor semiconductor device of claim 9, further comprising a plurality of solder balls implanted on the second surface of the substrate.

11. The sensor semiconductor device of claim 9, further comprising a circuit build-up structure formed on the circuit layer that is electrically connected to the metal bumps and the electrode pads of the sensor chip.

12. The sensor semiconductor device of claim 9, wherein at least one substrate comprises at least one single substrate, a matrix of substrates, or a strip of substrates.

13. The sensor semiconductor device of claim 9, wherein the light-penetrable lid is mounted on the circuit layer to cover the second opening of the dielectric layer.

14. The sensor semiconductor device of claim 9, which is a chip-scale packaged sensor semiconductor device.

15. The sensor semiconductor device of claim 9, wherein the metal bumps are gold bumps or solder bumps.

16. The sensor semiconductor device of claim 9, wherein the light-penetrable lid is made of glass or transparent paste.