Method of manufacturing semiconductor device
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Abstract
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H2, O, O2, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.
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Citations
27 Claims
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1. (canceled)
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2. A method of manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising amorphous silicon over a substrate;
providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;
crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;
selectively forming a gettering site in the crystallized semiconductor film; and
heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light so that the metal element contained in the crystallized semiconductor film is gettered by said gettering site. - View Dependent Claims (3, 4, 5, 6)
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7. A method of manufacturing a semiconductor device comprising:
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forming a blocking layer over a substrate;
forming a semiconductor film comprising amorphous silicon over the blocking layer;
providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;
crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;
selectively forming a gettering site in the crystallized semiconductor film; and
heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light so that the metal element contained in the crystallized semiconductor film is gettered by said gettering site. - View Dependent Claims (8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising amorphous silicon over a substrate;
providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;
crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;
increasing crystallinity of the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light;
selectively forming a gettering site in the crystallized semiconductor film after the irradiation of the second light; and
heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with third light so that the metal element contained in the crystallized semiconductor film is gettered by said gettering site. - View Dependent Claims (13, 14, 15)
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16. A method of manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising amorphous silicon over a substrate;
providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;
crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;
introducing a rare gas element into a selected region of the crystallized semiconductor film; and
heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light so that the metal element contained in the crystallized semiconductor film is gettered by said selected region. - View Dependent Claims (17, 18, 19)
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20. A method of manufacturing a semiconductor device comprising:
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forming a blocking layer over a substrate;
forming a semiconductor film comprising amorphous silicon over the blocking layer;
providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;
crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;
introducing a rare gas element into a selected region of the crystallized semiconductor film; and
heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light so that the metal element contained in the crystallized semiconductor film is gettered by said selected region. - View Dependent Claims (21, 22, 23)
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24. A method of manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising amorphous silicon over a substrate;
providing said semiconductor film with a material for promoting crystallization of silicon, said material comprising a metal element;
crystallizing said semiconductor film provided with said material by irradiating said semiconductor film with first light;
increasing crystallinity of the crystallized semiconductor film by irradiating the crystallized semiconductor film with second light;
introducing a rare gas element into a selected region of the crystallized semiconductor film; and
heating the crystallized semiconductor film by irradiating the crystallized semiconductor film with third light so that the metal element contained in the crystallized semiconductor film is gettered by said selected region. - View Dependent Claims (25, 26, 27)
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Specification