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Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer

  • US 20060270206A1
  • Filed: 05/18/2006
  • Published: 11/30/2006
  • Est. Priority Date: 05/18/2005
  • Status: Active Grant
First Claim
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1. A method of manufacturing an ohmic contact layer which is used for a light emitting device and comprises a first conductive material layer and a second conductive material layer having through-holes corresponding to islands, the method comprising:

  • forming a first conductive material layer on a semiconductor layer;

    forming a mask layer comprising a plurality of nano-sized islands on the first conductive material layer;

    forming a second conductive material layer on the first conductive material layer and on the islands in the mask layer; and

    removing the portion of the second conductive material on the islands through a lift-off process using a solvent.

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