III-V Group GaN-based compound semiconductor device
First Claim
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1. A III-V Group GaN-based compound semiconductor device comprising:
- an active layer; and
a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<
x<
1) and GaN layers, and the composition ratio of aluminum of the AlxGa(1-x)N layers decreases at a predetermined rate away from the active layer.
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Abstract
A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<x<1) and GaN layers, and the composition ratio of aluminum of the AlxGa(1-x)N layers decreases at a predetermined rate away from the active layer.
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Citations
12 Claims
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1. A III-V Group GaN-based compound semiconductor device comprising:
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an active layer; and
a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<
x<
1) and GaN layers, and the composition ratio of aluminum of the AlxGa(1-x)N layers decreases at a predetermined rate away from the active layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A III-V Group GaN-based compound semiconductor device comprising:
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an active layer; and
a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<
x<
1) and AlyGa(1-y)N layers (O<
y<
1), and, the composition ratios of aluminum of the AlxGa(1-x)N layers and AlyGa(1-y)N layers decrease at a predetermined rate away from the active layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification