III-V Group GaN-based compound semiconductor device

• US 20060273300A1
• Filed: 06/02/2006
• Published: 12/07/2006
• Est. Priority Date: 06/03/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Ha, Kyoung-ho, Ryu, Han-youl, Son, Joong-kon
• Granted Patent: US 7,826,505 B2
• Time in Patent Office: Days
• US Class Current: 257/15
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/2013 MQW barrier reflection layers
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/3213 asymmetric clading layers
• CPC Class Codes: H01S 5/3216 quantum well or superlattice cladding layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating Al_xGa_(1-x)N layers (0<x<1) and GaN layers, and the composition ratio of aluminum of the Al_xGa_(1-x)N layers decreases at a predetermined rate away from the active layer.

Claims

1. A III-V Group GaN-based compound semiconductor device comprising:

an active layer; and

a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating Al_xGa_(1-x)N layers (0<

x<

1) and GaN layers, and the composition ratio of aluminum of the Al_xGa_(1-x)N layers decreases at a predetermined rate away from the active layer.

2. The III-V Group GaN-based compound semiconductor device of claim 1, wherein the composition ratio of aluminum in the Al_xGa_(1-x)N layers decreases at a rate of 1.3% or less.

3. The III-V Group GaN-based compound semiconductor device of claim 1, wherein, the composition ratios of aluminum of the Al_xGa_(1-x)N layers decrease gradually at a predetermined rate away from the active layer and the thicknesses of the Al_xGa_(1-x)N layer increase gradually away from the active layer

4. The III-V Group GaN-based compound semiconductor device of claim 1, wherein the composition ratios of aluminum of the Al_xGa_(1-x)N layers decrease gradually at a predetermined rate away from the active layer and the thicknesses of the GaN layers gradually increase away from the active layer.

5. The III-V Group GaN-based compound semiconductor device of claim 1, wherein the composition ratios of aluminum of the Al_xGa_(1-x)N layers are predetermined low values, and the Al_xGa_(1-x)N layers are doped with p-type or n-type impurities.

6. The III-V Group GaN-based compound semiconductor device of claim 1, wherein the the Al_xGa_(1-x)N layer is doped with p-type or n-type impurities

7. A III-V Group GaN-based compound semiconductor device comprising:

an active layer; and

a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating Al_xGa_(1-x)N layers (0<

x<

1) and Al_yGa_(1-y)N layers (O<

y<

1), and, the composition ratios of aluminum of the Al_xGa_(1-x)N layers and Al_yGa_(1-y)N layers decrease at a predetermined rate away from the active layer.

8. The III-V Group GaN-based compound semiconductor device of claim 7, wherein the composition ratio of aluminum in the Al_xGa_(1-x)N layers decreases at a rate of 1.3% or less.

9. The III-V Group GaN-based compound semiconductor device of claim 7, wherein the composition ratios of aluminum of the Al_xGa_(1-x)N layers and the Al_yGa(_1-y)N layers decrease gradually at a predetermined rate away from the active layer, and the thicknesses of the Al_xGa_(1-x)N layers increase gradually away from the active layer.

10. The III-V Group GaN-based compound semiconductor device of claim 7, wherein, the composition ratios of aluminum of the Al_xGa_(1-x)N layers and the Al_yGa_(1-y)N layers decreases gradually at a predetermined rate away from the active layer, and the thicknesses of the Al_yGa_(1-y)N layers increase gradually away from the active layer.

11. The III-V Group GaN-based compound semiconductor device of claim 7, wherein the composition ratios of aluminum of the Al_xGa_(1-x)N layers are predetermined low values, and the Al_xGa_(1-x)N layers are doped with p-type or n-type impurities.

12. The III-V Group GaN-based compound semiconductor device of claim 7, wherein the composition ratios of aluminum of the Al_yGa_(1-y)N layers are predetermined low values, and the Al_yGa_(1-y)N layers are doped with p-type or n-type impurities.