Semiconductor Device and Method of Fabricating the Same
First Claim
1. A semiconductor device comprising:
- a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
a first insulating film over the first and second gate electrodes and over the source wiring;
a first semiconductor film having a source region, a drain region and a channel-forming region over the first insulating film;
a second semiconductor film overlapped with the second gate electrode;
a second insulating film over the first and second semiconductor films;
a gate wiring connected to the first gate electrode over the second insulating film;
a connection electrode for connecting a source wiring and the source region together; and
a pixel electrode connected to the drain region and to the second semiconductor film.
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Abstract
An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
101 Citations
38 Claims
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1. A semiconductor device comprising:
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a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
a first insulating film over the first and second gate electrodes and over the source wiring;
a first semiconductor film having a source region, a drain region and a channel-forming region over the first insulating film;
a second semiconductor film overlapped with the second gate electrode;
a second insulating film over the first and second semiconductor films;
a gate wiring connected to the first gate electrode over the second insulating film;
a connection electrode for connecting a source wiring and the source region together; and
a pixel electrode connected to the drain region and to the second semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
a first insulating film over the first and second gate electrodes and over the source wiring;
a first semiconductor film having a source region, a drain region and a channel-forming region over the first insulating film;
a second semiconductor film overlapped with the second gate electrode;
a second insulating film over the first and second semiconductor films;
a gate wiring connected to the first gate electrode over the second insulating film;
a connection electrode for connecting a source wiring and the source region together; and
a pixel electrode connected to the drain region and to the second semiconductor film, wherein island-like regions are formed under the pixel electrode thereby rendering a surface of the pixel electrode rugged. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A display device comprising:
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a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
a first insulating film over the first and second gate electrodes and over the source wiring;
a first semiconductor film having a source region, a drain region and a channel-forming region over the first insulating film;
a second semiconductor film overlapped with the second gate electrode;
a second insulating film over the first and second semiconductor films;
a gate wiring connected to the first gate electrode over the second insulating film;
a connection electrode for connecting a source wiring and the source region together; and
a pixel electrode connected to the drain region and to the second semiconductor film. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A display device comprising:
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a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
a first insulating film over the first and second gate electrodes and over the source wiring;
a first semiconductor film having a source region, a drain region and a channel-forming region over the first insulating film;
a second semiconductor film overlapped with the second gate electrode;
a second insulating film over the first and second semiconductor films;
a gate wiring connected to the first gate electrode over the second insulating film;
a connection electrode for connecting a source wiring and the source region together; and
a pixel electrode connected to the drain region and to the second semiconductor film, wherein island-like regions are formed under the pixel electrode thereby rendering a surface of the pixel electrode rugged. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38)
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Specification