Integrated circuit device and manufacturing method thereof

• US 20060273319A1
• Filed: 05/30/2006
• Published: 12/07/2006
• Est. Priority Date: 06/03/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya, Kusumoto, Naoto, Dairiki, Koji
• Granted Patent: US 7,972,910 B2
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

Claims

1. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which has higher hardness than a substrate over one surface of the substrate;

forming an element over the first layer; and

grinding or polishing the substrate from the other surface of the substrate,

wherein the element includes a TFT.

2. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer over one surface of a substrate;

forming an element over the first layer; and

etching the substrate from the other surface of the substrate by chemical reaction,

wherein the first layer is formed with a material which is resistant to an etchant used for etching the substrate, and

wherein the element includes a TFT.

3. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over one surface of a substrate;

forming an element over the first layer; and

thinning the substrate from the other surface of the substrate or removing the first substrate,

wherein the element includes a TFT.

7. The manufacturing method of an integrated circuit device according to claim 3, wherein the step of thinning the substrate is performed by grinding or polishing the substrate.

11. The manufacturing method of an integrated circuit device according to claim 3, wherein the step thinning the substrate is performed by etching the substrate by chemical reaction.

15. The manufacturing method of an integrated circuit device according to claim 3, wherein the substrate is thinned so as to become a thickness of the substrate 100 μ

m or less.

19. The manufacturing method of an integrated circuit device according to claim 3, wherein a diamond like carbon film including nitrogen, a boron carbonitride film, or a tungsten carbide film is formed between the substrate and the first layer.

23. The manufacturing method of an integrated circuit device according to claim 3, wherein a diamond like carbon film including nitrogen, a boron carbonitride film, or a tungsten carbide film is formed between the first layer and the element.

25. The manufacturing method of an integrated circuit device according to claim 3, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

29. The manufacturing method of an integrated circuit device according to claim 3, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the first layer and the element.

31. The manufacturing method of an integrated circuit device according to claim 3,

forming a second layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the substrate and the first layer;

forming a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the first layer and the element; and

making a Si concentration of the second layer formed between the substrate and the first layer lower than a Si concentration of the layer formed between the first layer and the element.

4. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over one surface of a substrate;

forming an element over the first layer;

forming a second layer which mainly contains diamond like carbon over the element; and

thinning the substrate from the other surface of the substrate or removing the first substrate,

wherein the element includes a TFT.

8. The manufacturing method of an integrated circuit device according to claim 4, wherein the step of thinning the substrate is performed by grinding or polishing the substrate.

12. The manufacturing method of an integrated circuit device according to claim 4, wherein the step thinning the substrate is performed by etching the substrate by chemical reaction.

16. The manufacturing method of an integrated circuit device according to claim 4, wherein the substrate is thinned so as to become a thickness of the substrate 100 μ

m or less.

20. The manufacturing method of an integrated circuit device according to claim 4, wherein a diamond like carbon film including nitrogen, a boron carbonitride film, or a tungsten carbide film is formed between the substrate and the first layer.

24. The manufacturing method of an integrated circuit device according to claim 4, wherein a diamond like carbon film including nitrogen, a boron carbonitride film, or a tungsten carbide film is formed between the first layer and the element.

26. The manufacturing method of an integrated circuit device according to claim 4, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

30. The manufacturing method of an integrated circuit device according to claim 4, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the first layer and the element.

32. The manufacturing method of an integrated circuit device according to claim 4,

forming a third layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the substrate and the first layer;

forming a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the first layer and the element; and

making a Si concentration of the third layer formed between the substrate and the first layer lower than a Si concentration of the layer formed between the first layer and the element.

33. The manufacturing method of an integrated circuit device according to claim 4, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the element and the second layer which mainly contains diamond like carbon.

5. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over one surface of a substrate;

forming a plurality of unit circuits over the first layer;

separating the plurality of unit circuits into every unit circuit;

forming a second layer which mainly contains diamond like carbon over the separated unit circuit; and

thinning the substrate from the other surface of the substrate or removing the first substrate.

9. The manufacturing method of an integrated circuit device according to claim 5, wherein the step of thinning the substrate is performed by grinding or polishing the substrate.

13. The manufacturing method of an integrated circuit device according to claim 5, wherein the step thinning the substrate is performed by etching the substrate by chemical reaction.

17. The manufacturing method of an integrated circuit device according to claim 5, wherein the substrate is thinned so as to become a thickness of the substrate 100 μ

m or less.

21. The manufacturing method of an integrated circuit device according to claim 5, wherein a diamond like carbon film including nitrogen, a boron carbonitride film, or a tungsten carbide film is formed between the substrate and the first layer.

27. The manufacturing method of an integrated circuit device according to claim 5, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

6. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over one surface of a substrate;

forming a plurality of unit circuits over the first layer;

separating the plurality of unit circuits into every unit circuit;

wrapping each of unit circuits with the first layer and a second layer which mainly contain diamond like carbon by forming the second layer which mainly contains diamond like carbon over the separated unit circuit; and

thinning the substrate from the other surface of the substrate or removing the first substrate.

10. The manufacturing method of an integrated circuit device according to claim 6, wherein the step of thinning the substrate is performed by grinding or polishing the substrate.

14. The manufacturing method of an integrated circuit device according to claim 6, wherein the step thinning the substrate is performed by etching the substrate by chemical reaction.

18. The manufacturing method of an integrated circuit device according to claim 6, wherein the substrate is thinned so as to become a thickness of the substrate 100 μ

m or less.

22. The manufacturing method of an integrated circuit device according to claim 6, wherein a diamond like carbon film including nitrogen, a boron carbonitride film, or a tungsten carbide film is formed between the substrate and the first layer.

28. The manufacturing method of an integrated circuit device according to claim 6, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

34. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over a first substrate and a first element formed over the first layer;

forming a second layer which mainly contains diamond like carbon over a second substrate and a second element formed over the second layer;

bonding the first substrate with the second substrate so that the first element faces to the second element; and

thinning or removing one or both of the first substrate and the second substrate,

wherein each of the first and the second elements includes a TFT.

35. The manufacturing method of an integrated circuit device according to claim 34, wherein the first substrate is bonded with the second substrate so that the first element and the second element are electrically connected.

36. The manufacturing method of an integrated circuit device according to claim 34, wherein the first substrate and the second substrate are bonded with an adhesive.

37. An integrated circuit device comprising:

a layer which mainly contains diamond like carbon which is formed over one surface of a substrate; and

an element formed over the layer,

wherein a thickness of the substrate is 100 μ

m or less, and

wherein the element includes a TFT.

40. The integrated circuit device according to claim 37, wherein a diamond like carbon film including nitrogen, a BCN film, or a WC film is formed between the substrate and the first layer.

43. The integrated circuit device according to claim 37, wherein a diamond like carbon film including nitrogen, a BCN film, or a WC film is formed between the first layer and the element.

45. The integrated circuit device according to claim 37, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

48. The integrated circuit device according to claim 37, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the first layer and the element.

50. The integrated circuit device according to claim 37,

the layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the substrate and the first layer;

the layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the first layer and the element; and

wherein a Si concentration of the layer formed between the substrate and the first layer is lower than a Si concentration of the layer formed between the first layer and the element.

38. An integrated circuit device comprising:

a first layer which mainly contains diamond like carbon which is formed over one surface of a substrate;

an element formed over the first layer; and

a second layer which mainly contains diamond like carbon which is formed over the element,

wherein a thickness of the substrate is 100 μ

m or less, and

wherein the element includes a TFT.

41. The integrated circuit device according to claim 38, wherein a diamond like carbon film including nitrogen, a BCN film, or a WC film is formed between the substrate and the first layer.

44. The integrated circuit device according to claim 38, wherein a diamond like carbon film including nitrogen, a BCN film, or a WC film is formed between the first layer and the element.

46. The integrated circuit device according to claim 38, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

49. The integrated circuit device according to claim 38, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the first layer and the element.

51. The integrated circuit device according to claim 38,

the layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the substrate and the first layer;

the layer which mainly contains diamond like carbon and Si in a range of 1 to 20% between the first layer and the element; and

wherein a Si concentration of the layer formed between the substrate and the first layer is lower than a Si concentration of the layer formed between the first layer and the element.

39. An integrated circuit device comprising:

a first layer which mainly contains diamond like carbon which is formed over one surface of a substrate;

a unit circuit formed over the first layer;

a second layer which mainly contains diamond like carbon which is formed over the unit circuit so as to cover the unit circuit,

wherein a thickness of the substrate is 100 μ

m or less.

42. The integrated circuit device according to claim 39, wherein is a diamond like carbon film including nitrogen, a BCN film, or a WC film is formed between the substrate and the first layer.

47. The integrated circuit device according to claim 39, wherein a layer which mainly contains diamond like carbon and Si in a range of 1 to 20% is formed between the substrate and the first layer.

52. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over one surface of a first substrate;

forming an element over the first layer;

bonding a second substrate over the element; and

thinning the first substrate from the other surface of the first substrate or removing the first substrate,

wherein the element includes a TFT.

53. A manufacturing method of an integrated circuit device, comprising the steps of:

forming a first layer which mainly contains diamond like carbon over one surface of a first substrate;

forming an element over the first layer;

forming a second layer which mainly contains diamond like carbon over the element;

bonding a second substrate over the second layer; and

thinning the first substrate from the other surface of the first substrate or removing the first substrate,

wherein the element includes a TFT.