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Integrated circuit device and manufacturing method thereof

  • US 20060273319A1
  • Filed: 05/30/2006
  • Published: 12/07/2006
  • Est. Priority Date: 06/03/2005
  • Status: Active Grant
First Claim
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1. A manufacturing method of an integrated circuit device, comprising the steps of:

  • forming a first layer which has higher hardness than a substrate over one surface of the substrate;

    forming an element over the first layer; and

    grinding or polishing the substrate from the other surface of the substrate, wherein the element includes a TFT.

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