Light-emitting diode and process for producing the same

• US 20060273324A1
• Filed: 07/26/2004
• Published: 12/07/2006
• Est. Priority Date: 07/28/2003
• Status: Abandoned Application

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Kozawa, Takahiro, Asai, Makoto, Yamazaki, Shiro, Narukawa, Mitsuhisa
• Application Number:
  US10/566,211
• Publication Number:
  US 20060273324A1
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10158 at the passive surface
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al_0.005In_0.045Ga_0.95N well layer 51 and about 18 nm in thickness of Al_0.12Ga_0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.

Claims

1. A method for fabricating a light-emitting diode of a surface emitting type in which a semiconductor layer is deposited on a crystal growth plane of a crystal growth substrate, comprising steps of:

a shaping process for forming at least one of an output plane and a reflection plane which contributes to luminous output of the device through polishing treatment, dicing treatment, and blasting treatment from the back surface of said crystal growth substrate; and

a finishing process for finishing said at least one of output plane and said reflection plane by further carrying out etching treatment.

2. A method for fabricating a light-emitting diode according to claim 1, wherein said shaping process comprises a taper part forming process for forming a taper plane, which inclines to said crystal growth plane of said crystal growth substrate, at least as a portion of said output plane or at least as a portion of said reflection plane.

3. A method for fabricating a light-emitting diode according to claim 2, wherein at least a portion of said taper part forming process comprises of a process for forming an approximately V-shaped dividing groove which divides a semiconductor wafer comprising plural light-emitting diodes into each of said light-emitting diode.

4. A method for fabricating a light-emitting diode according to claim 1, wherein peak luminous wavelength of said light-emitting diode is less than 470 nm.

5. A method for fabricating a light-emitting diode according to claim 1, wherein said crystal growth substrate is formed by using Al_xGa_1-xN (0≦

x≦

1) or silicon carbide (SiC).

18. A method for fabricating a light-emitting diode according to claim 2, wherein peak luminous wavelength of said light-emitting diode is less than 470 nm.

19. A method for fabricating a light-emitting diode according to claim 2, wherein said crystal growth substrate is formed by using Al_xGa_1-xN (0≦

x≦

1) or silicon carbide (SiC).

6. A light-emitting diode of a surface emitting type in which a semiconductor layer is deposited on a crystal growth plane of a crystal growth substrate, wherein

said crystal growth substrate comprises at least one of an output plane and a reflection plane which contributes to luminous output of the device through a physical shaping process such as polishing treatment, dicing treatment and blasting treatment, and

a physically damaged layer which is formed on the surface of at least one of said output plane and said reflection plane and remains owing to friction and shock generated in said shaping process is removed.

7. A light-emitting diode according to claim 6, wherein a metal layer which has light-transparency to transmit light to the luminous extracting side of said device is formed on said output plane.

8. A light-emitting diode according to claim 6, wherein a metal layer which reflects light to the luminous extracting side of said device is formed on said reflection plane.

9. A light-emitting diode according to claim 6, wherein said crystal growth substrate is formed by using Al_xGa_1-xN (0≦

x≦

1) or silicon carbide (SiC).

10. A light-emitting diode according to claim 6, wherein a taper plane which inclines to said crystal growth plane of said crystal growth substrate is formed at least as a portion of at least one of output plane or at least as a portion of said reflection plane.

12. A light-emitting diode according to claim 10 which is fabricated by dividing a semiconductor wafer comprising plural light-emitting diodes into each of said light-emitting diode, comprising:

a taper plane at least at a portion of the sidewall of said light-emitting diode,

wherein said taper plane is a portion of the plane of an approximately V-shaped dividing groove which divides the semiconductor wafer into each of said light-emitting diode.

13. A light-emitting diode according to claim 6, wherein the peak luminous wavelength of said light-emitting diode is less than 470 nm.

20. A light-emitting diode according to claim 7, wherein a metal layer which reflects light to the luminous extracting side of said device is formed on said reflection plane.

11. A light-emitting diode of a surface emitting type in which a semiconductor layer is deposited on a crystal growth plane of a crystal growth substrate, comprising:

a taper plane which inclines to said crystal growth plane of said crystal growth substrate which is formed at least at a portion of the sidewall of said light-emitting diode,

wherein said taper plane is exposed to the surface side of said light-emitting diode at which a semiconductor crystal layer and a positive electrode are formed, and

a physically damaged layer which is formed on the surface of said taper plane and remains owing to friction and shock generated in said taper part is removed.

14. A method for forming an electrode in which an electrode is formed on a polished plane of a conductive semiconductor substrate which comprises a Group III nitride compound semiconductor and has already been polished comprising a step of:

etching process for carrying out dry-etching treatment to said polished plane of said semiconductor substrate before electrode forming process for forming an electrode on said polished plane of said semiconductor substrate.

15. A method for forming an electrode according to claim 14, wherein said semiconductor substrate is formed by using an n-type Al_xGa_1-xN (0≦

x≦

1).

16. A method for forming an electrode according to claim 14, wherein depth of removing said polished plane through said dry-etching treatment is in a range from 0.1 μ

m to 15 μ

m.

17. A method for forming an electrode according to claim 16, wherein depth of removing said polished plane through said dry-etching treatment is in a range from 0.2 μ

m to 8 μ

m.