Light emitting device, method for making the same, and nitride semiconductor substrate
First Claim
1. A light-emitting device comprising:
- a nitride semiconductor substrate;
an n-type nitride semiconductor layer disposed on a first primary surface side of said nitride semiconductor substrate;
a p-type nitride semiconductor layer positioned further away from said nitride semiconductor substrate compared to said n-type nitride semiconductor layer; and
a light-emitting layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, wherein said p-type nitride semiconductor layer side is down-mounted and light is emitted from a second main surface of said nitride semiconductor substrate, which is a main surface opposite from said first main surface; and
hemispherical projections are formed on said second main surface of said nitride semiconductor substrate.
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Abstract
A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; a multi-quantum well (MQW) 4 positioned between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In this light-emitting device, the p-type AlxGa1-xN layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.
29 Citations
6 Claims
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1. A light-emitting device comprising:
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a nitride semiconductor substrate;
an n-type nitride semiconductor layer disposed on a first primary surface side of said nitride semiconductor substrate;
a p-type nitride semiconductor layer positioned further away from said nitride semiconductor substrate compared to said n-type nitride semiconductor layer; and
a light-emitting layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, wherein said p-type nitride semiconductor layer side is down-mounted and light is emitted from a second main surface of said nitride semiconductor substrate, which is a main surface opposite from said first main surface; and
hemispherical projections are formed on said second main surface of said nitride semiconductor substrate. - View Dependent Claims (2, 3, 4)
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5. A method for making a light-emitting device equipped with a nitride semiconductor substrate, comprising:
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a step for preparing a nitride semiconductor substrate; and
a step for forming hemispherical projections on a second main surface of said nitride semiconductor substrate, which is a side opposite from a first main surface on which a light-emitting layer is formed, by performing reactive ion etching.
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6. A nitride semiconductor substrate comprising:
hemispherical projections formed on one main surface.
Specification