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Light emitting device, method for making the same, and nitride semiconductor substrate

  • US 20060273334A1
  • Filed: 02/24/2006
  • Published: 12/07/2006
  • Est. Priority Date: 05/17/2005
  • Status: Active Grant
First Claim
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1. A light-emitting device comprising:

  • a nitride semiconductor substrate;

    an n-type nitride semiconductor layer disposed on a first primary surface side of said nitride semiconductor substrate;

    a p-type nitride semiconductor layer positioned further away from said nitride semiconductor substrate compared to said n-type nitride semiconductor layer; and

    a light-emitting layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, wherein said p-type nitride semiconductor layer side is down-mounted and light is emitted from a second main surface of said nitride semiconductor substrate, which is a main surface opposite from said first main surface; and

    hemispherical projections are formed on said second main surface of said nitride semiconductor substrate.

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