Semiconductor light emitting device

• US 20060273335A1
• Filed: 07/11/2005
• Published: 12/07/2006
• Est. Priority Date: 07/12/2004
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Nishida, Toshio, Sakai, Mitsuhiko, Sonobe, Masayuki, Asahara, Hirokazu
• Granted Patent: US 7,375,380 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.

Claims

1. A semiconductor light emitting device comprising:

a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers;

a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion; and

a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.

2. A semiconductor light emitting device as set forth in claim 1, further comprising a transparent substrate which is transparent to the wavelength of the light emitted from the semiconductor light emitting portion, and has a light extracting surface defined by one surface thereof through which the light emitted from the semiconductor light emitting portion is extracted to the outside, and a device formation surface defined by the other surface thereof on which the semiconductor light emitting portion is provided, the device formation surface of the transparent substrate being opposed to the first contact layer.

3. A semiconductor light emitting device as set forth in claim 1, further comprising a transparent insulation film disposed between the transparent electrode and the metal reflection film, wherein

the metal reflection film is connected to the transparent electrode via an opening formed in the transparent insulation film.

4. A semiconductor light emitting device as set forth in claim 1, further comprising an electrode portion extending from the first contact layer toward the metal reflection film.

5. A semiconductor light emitting device as set forth in claim 1, wherein

the transparent electrode comprises a Zn_1-xMg_xO (wherein 0≦

x<

1) film.

6. A semiconductor light emitting device as set forth in claim 1, wherein

the first contact layer has a light extracting surface defined by one surface thereof,

the device further comprising an electrode provided on the light extracting surface opposite from the transparent electrode.

7. A semiconductor light emitting device as set forth in claim 6, wherein

the light extracting surface is a roughened surface.

8. A semiconductor light emitting device as set forth in claim 6, wherein

the light extracting surface is a regularly undulated surface.

9. A semiconductor light emitting device as set forth in claim 6, wherein

the first contact layer is a photonic crystal layer.