Vertically-structured gan-based light emitting diode and method of manufacturing the same
First Claim
1. A method of manufacturing a vertically-structured GaN-based light emitting diode comprising:
- forming a GaN layer on a substrate;
forming a compound layer on the GaN layer in order to perform an epitaxial lateral over-growth (ELOG) process;
patterning the compound layer in a predetermined shape;
forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;
forming a structure supporting layer on the p-type GaN layer;
sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer;
removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and
forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
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Abstract
The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
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Citations
18 Claims
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1. A method of manufacturing a vertically-structured GaN-based light emitting diode comprising:
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forming a GaN layer on a substrate;
forming a compound layer on the GaN layer in order to perform an epitaxial lateral over-growth (ELOG) process;
patterning the compound layer in a predetermined shape;
forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;
forming a structure supporting layer on the p-type GaN layer;
sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer;
removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and
forming an n-type electrode on the n-type GaN layer patterned in a concave shape. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A vertically-structured GaN-based light emitting diode comprising:
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a structure supporting layer;
a p-type electrode that is formed on the upper or lower surface of the structure supporting layer;
a p-type GaN layer that is formed on the structure supporting layer on which the p-type electrode is formed;
an active layer that is formed on the p-type GaN layer;
an n-type GaN layer that is formed on the active layer and is doped with n-type impurities;
an undoped GaN layer that is formed on the n-type GaN layer and on which a plurality of concave patterns are periodically formed; and
an n-type electrode that is formed on the undoped GaN layer. - View Dependent Claims (15, 16, 17, 18)
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Specification