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GaN-series of light emitting diode with high light extraction efficiency

  • US 20060273342A1
  • Filed: 08/10/2006
  • Published: 12/07/2006
  • Est. Priority Date: 11/25/2003
  • Status: Abandoned Application
First Claim
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1. A GaN-series of light emitting diode with high light extraction efficiency comprising:

  • a substrate; and

    a semiconductor formed on the substrate and the semiconductor having a n-type semiconductor, a light emitting layer, a p-type semiconductor layer, wherein the light emitting layer is between the n-type semiconductor layer and the p-type semiconductor layer and n-type semiconductor layer is formed on the substrate;

    wherein, a surface of the p-type semiconductor layer has a non-hexagonal texture thereon.

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