Method of forming stack layer and method of manufacturing electronic device having the same
First Claim
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1. A method of forming a stacked structure in an electronic material, comprising:
- coating at least one target material layer on a substrate of the electronic material;
forming a mask layer by coating a positive photoresist having a polymer on the substrate, the polymer comprising at least 50 mole % of monomers having a structure selected from the group consisting of Formulae 1 to 3;
first baking the mask layer at a first temperature;
exposing the mask layer to light with a predetermined pattern;
second baking the mask layer at a second temperature;
developing the mask layer to form an etch window in the mask layer;
etching the target material layer through the etch window;
repeating at least twice the exposing to the developing; and
removing the mask layer;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R3 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring.
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Abstract
A method of forming a stacked structure in an electronic device, where a photoresist for performing multi-patterning processes is used. Also, a method of manufacturing a FED in which different structures can be multi-patterned by using a single photoresist mask. The photoresist has a solubility to a solvent by heat-treatment after exposure, and a complicated structure can be formed using the photoresist.
15 Citations
20 Claims
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1. A method of forming a stacked structure in an electronic material, comprising:
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coating at least one target material layer on a substrate of the electronic material;
forming a mask layer by coating a positive photoresist having a polymer on the substrate, the polymer comprising at least 50 mole % of monomers having a structure selected from the group consisting of Formulae 1 to 3;
first baking the mask layer at a first temperature;
exposing the mask layer to light with a predetermined pattern;
second baking the mask layer at a second temperature;
developing the mask layer to form an etch window in the mask layer;
etching the target material layer through the etch window;
repeating at least twice the exposing to the developing; and
removing the mask layer;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R3 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a field emission device, comprising:
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forming a stacked structure having a substrate, a cathode having a predetermined pattern on the substrate, a gate insulation layer on the cathode, and a gate electrode layer on the gate insulation layer;
forming a mask layer by coating a positive photoresist having a polymer on the stacked structure, the polymer comprising at least 50 mole % of monomers having a structure selected from the group consisting of Formulae 1 to 3;
first baking the mask layer at a first temperature range;
first exposing the mask layer to light with a first pattern;
second baking the mask layer at a second temperature range;
forming on the mask layer an etch window partially exposing the gate electrode by developing the mask layer;
forming a gate hole in the gate electrode layer by etching a portion of the gate electrode layer exposed by the etch window;
forming a throughhole in the gate electrode layer by etching a portion of the gate insulation layer;
second exposing to light a region including the etch window of the mask layer and having a greater size then the etch window of the mask layer, and baking the second-exposed region at the second temperature range to form an enlarged etch window;
enlarging the gate hole by etching a region adjacent to the gate hole in the gate electrode exposed by the second exposure; and
removing the mask layer;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is a alkyl group having 1 to 6 linear or cyclic carbon atoms; and
R3 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring; and
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method of patterning layers of a stacked structure in an electronic device, the method comprising:
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forming a photoresist mask layer on the stacked structure having the plural layers, the mask layer comprising a polymer comprising at least 50 mole % of monomers having a structure selected from the group consisting of Formulae 1 to 3;
baking the mask layer at a first temperature range;
exposing the mask layer with a first pattern;
baking the mask layer at a second temperature range;
forming on the mask layer an etch window partially exposing a first layer of the plural layers;
forming a first hole in the first layer by etching a portion of the first layer exposed by the etch window;
forming a second hole in a second layer formed below the first layer by etching a portion of the second layer;
exposing the mask layer to light with a second pattern;
baking the region exposed to the light with the second pattern at the second temperature range; and
removing the mask layer;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R2 is a alkyl group having 1 to 6 linear or cyclic carbon atoms; and
R3 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring; and
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method of forming a photoresist mask layer for a multiple patterning of an electronic device, the method comprising;
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preparing a composition having a polymer, the polymer comprising a monomer having a structure selected from the group consisting of Formulae 1 to 3;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R2 is a alkyl group having 1 to 6 linear or cyclic carbon atoms; and
R3 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms;
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring; and
where R1 is hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, R2 is an alkyl group having 1 to 6 linear or cyclic carbon atoms, R3 and R4 are independently hydrogen or an alkyl group having 1 to 6 linear or cyclic carbon atoms, and R1 and R2, or R1 and either R3 or R4, or R2 and either R3 or R4 are joined to form a 5-, 6-, or 7-membered ring; and
applying the composition on the electronic device.
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Specification