Systems and methods for plasma etching

• US 20060276036A1
• Filed: 10/15/2004
• Published: 12/07/2006
• Est. Priority Date: 10/15/2004
• Status: Active Grant

• Current Assignee: 4D-S Pty, Ltd.
• Original Assignee: 4D-S Pty, Ltd.
• Inventors: Nagashima, Makoto, Schmidt, Dominik
• Granted Patent: US 7,425,504 B2
• Time in Patent Office: Days
• US Class Current: 438/678
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H01L 21/32131 by physical means only
• CPC Class Codes: H01L 21/7687 Thin films associated with contacts of capacitors

Abstract

Systems and methods are disclosed for processing a semiconductor substrate by depositing a conductive layer on the substrate; patterning a set of insulating structures on the substrate; selectively back-biasing the substrate; depositing a layer of material on the substrate; and removing a part of the conductive layer selectively biased to attract cation bombardment.

Claims

1. A method for processing a semiconductor substrate, comprising:

depositing a conductive layer on the substrate;

patterning a set of insulating structures on the substrate;

selectively back-biasing the substrate;

depositing a layer of material on the substrate; and

removing a part of the conductive layer selectively biased to attract cation bombardment.

2. The method of claim 1, wherein the metal is platinum.

3. The method of claim 1, further comprising sputtering platinum on the layer.

4. The method of claim 1, wherein the back-biasing further comprises applying more than 250 watts of power.

5. The method of claim 1, wherein the back-biasing can be applied to the substrate through DC conduction or AC capacitive coupling.

6. The method of claim 1, wherein the layer is a CMO layer.

7. The method of claim 1, wherein said mask material used in said reactive ion etching comprises at least one metal selected from the group consisting of titanium, silver, ruthenium, germanium, platinum, palladium, an alloy comprising at least one of the foregoing metals as a main component and a compound thereof.

8. The method of claim 1, further comprising depositing a copper layer above the substrate.

9. The method of claim 8, further comprising depositing a titanium layer above the copper layer.

10. The method of claim 9, further comprising forming a silicon nitride layer and a platinum layer above the titanium layer.

11. The method of claim 10, further comprising forming a platinum layer above the silicon nitride layer.

12. The method of claim 11, further comprising removing the platinum layer and forming CMO layers.

13. The method of claim 12, further comprising depositing platinum layers above the CMO layers.

14. A face target sputtering apparatus to fabricate semiconductors, comprising:

an air-tight chamber in which an inert gas is admittable and exhaustible;

a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween;

a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates;

a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and

a back-bias power supply coupled to the substrate holder, wherein the substrate is selectively back-biased prior to face target sputtering with a metal to form a pattern on the layer.

15. The apparatus of claim 14, wherein a metal is platinum.

16. The apparatus of claim 15, wherein the platinum is sputtered on the layer.

17. The apparatus of claim 14, wherein the back-bias power supply applies more than 250 watts of power.

18. The apparatus of claim 14, wherein the layer is a PCMO layer.

19. The apparatus of claim 14, wherein a mask material is used in a reactive ion etching comprises at least one metal selected from the group consisting of titanium, magnesium, aluminum, germanium, platinum, and palladium.

20. The apparatus of claim 19, wherein the mask material is an alloy comprising at least one of said metals.