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Systems and methods for plasma etching

  • US 20060276036A1
  • Filed: 10/15/2004
  • Published: 12/07/2006
  • Est. Priority Date: 10/15/2004
  • Status: Active Grant
First Claim
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1. A method for processing a semiconductor substrate, comprising:

  • depositing a conductive layer on the substrate;

    patterning a set of insulating structures on the substrate;

    selectively back-biasing the substrate;

    depositing a layer of material on the substrate; and

    removing a part of the conductive layer selectively biased to attract cation bombardment.

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