MEMS pressure sensing device

• US 20060278009A1
• Filed: 08/09/2006
• Published: 12/14/2006
• Est. Priority Date: 10/29/2004
• Status: Active Grant

• Current Assignee: James Mcginty, Michael Mian, Peter J. Hopper, Robert Drury
• Original Assignee: James Mcginty, Michael Mian, Peter J. Hopper, Robert Drury
• Inventors: Hopper, Peter J., Drury, Robert, Mian, Michael, McGinty, James
• Granted Patent: US 7,373,833 B2
• Time in Patent Office: Days
• US Class Current: 73/724
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.

Claims

1. A pressure sensing system formed in a monolithic semiconductor substrate, the pressure sensing system comprising:

a pressure sensing device formed on the monolithic semiconductor substrate, the pressure sensing device adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment;

driver circuitry formed in the monolithic semiconductor substrate, the driver circuitry being responsive to input electrical signals for generating an output pressure signal; and

a conductive interconnect structure formed in the monolithic semiconductor substrate, the conductive interconnect structure being connected between the pressure sensing device and the driver circuitry for providing electrical pressure signals developed by the pressure sensing device as input electrical signals to the driver circuitry.

2. A pressure sensing system as in claim 1, and wherein the pressure sensing device comprises a capacitive pressure sensing device.

3. A pressure sensing system as in claim 1, and wherein the pressure sensing device is a piezoelectric pressure sensing device.

4. A method of forming a pressure sensing system in a monolithic semiconductor substrate, the method comprising:

forming a pressure sensing device in the monolithic semiconductor substrate, the pressure sensing device adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment;

forming driver circuitry in the monolithic semiconductor substrate, the driver circuitry being responsive to input electrical signals for generating an output pressure signal; and

forming a conductive interconnect structure in the monolithic semiconductor substrate, the conductive interconnect structure being connected between the pressure sensing device and the driver circuitry for providing electrical pressure signals developed by the pressure sensing device as input electrical signals to the driver circuitry.

5. A method as in claim 4, and wherein the pressure sensing device comprises a capacitive pressure sensing element.

6. A method as in claim 4, and wherein the pressure sensing device comprises a piezoelectric pressure sensing device.