MEMS pressure sensing device
First Claim
1. A pressure sensing system formed in a monolithic semiconductor substrate, the pressure sensing system comprising:
- a pressure sensing device formed on the monolithic semiconductor substrate, the pressure sensing device adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment;
driver circuitry formed in the monolithic semiconductor substrate, the driver circuitry being responsive to input electrical signals for generating an output pressure signal; and
a conductive interconnect structure formed in the monolithic semiconductor substrate, the conductive interconnect structure being connected between the pressure sensing device and the driver circuitry for providing electrical pressure signals developed by the pressure sensing device as input electrical signals to the driver circuitry.
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Abstract
A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
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Citations
6 Claims
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1. A pressure sensing system formed in a monolithic semiconductor substrate, the pressure sensing system comprising:
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a pressure sensing device formed on the monolithic semiconductor substrate, the pressure sensing device adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment;
driver circuitry formed in the monolithic semiconductor substrate, the driver circuitry being responsive to input electrical signals for generating an output pressure signal; and
a conductive interconnect structure formed in the monolithic semiconductor substrate, the conductive interconnect structure being connected between the pressure sensing device and the driver circuitry for providing electrical pressure signals developed by the pressure sensing device as input electrical signals to the driver circuitry. - View Dependent Claims (2, 3)
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4. A method of forming a pressure sensing system in a monolithic semiconductor substrate, the method comprising:
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forming a pressure sensing device in the monolithic semiconductor substrate, the pressure sensing device adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment;
forming driver circuitry in the monolithic semiconductor substrate, the driver circuitry being responsive to input electrical signals for generating an output pressure signal; and
forming a conductive interconnect structure in the monolithic semiconductor substrate, the conductive interconnect structure being connected between the pressure sensing device and the driver circuitry for providing electrical pressure signals developed by the pressure sensing device as input electrical signals to the driver circuitry. - View Dependent Claims (5, 6)
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Specification