System and method for controlling ion density and energy using modulated power signals

• US 20060278521A1
• Filed: 06/14/2005
• Published: 12/14/2006
• Est. Priority Date: 06/14/2005
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Stowell, Michael W.
• Application Number:
  US11/152,469
• Publication Number:
  US 20060278521A1
• Time in Patent Office: Days
• US Class Current: 204/192.100
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

A method for controlling ion density and sputtering rate in a sputtering system is disclosed. In one embodiment, a first pulse-width power signal is applied to the cathode to thereby generate a higher concentration of ions. The pulse-width of the first pulse-width power signal is then decreased to thereby increase the sputtering rate and decrease the ion density around the cathode. Next, the process is repeated to create a modulated signal.

Claims

1. A method of controlling ions in a sputtering system that includes at least one cathode, the method comprising:

generating a modulated power signal; and

providing the modulated power signal to the cathode.

2. The method of claim 1, wherein generating a modulated power signal comprises:

generating an amplitude-modulated power signal.

3. The method of claim 1, wherein generating a modulated power signal comprises:

generating an frequency-modulated power signal.

4. The method of claim 1, wherein generating a modulated power signal comprises:

generating an pulse-width modulated power signal.

5. The method of claim 1, wherein generating a modulated power signal comprises:

generating a pulse-amplitude modulated power signal.

6. The method of claim 1, further comprising:

Actively varying a characteristic of the modulated power signal while the sputtering system is sputtering to thereby impact film growth.

7. The method of claim 1, wherein the modulated power signal includes a DC signal.

8. The method of claim 1, wherein the modulated power signal includes an AC signal.

9. The method of claim 1, further comprising:

varying the modulation of the modulated power signal to increase ion density.

10. The method of claim 1, further comprising:

varying the modulation of the modulated power signal to decrease ion density.

11. A method for controlling ion density in a sputtering system, the method comprising:

providing a power signal to the sputtering system;

varying at least one characteristic of the power signal to control ion density, wherein the characteristic includes at least one of amplitude, frequency, width, repetition rate, and position.

12. A method for controlling ion density and sputtering rate in a sputtering system, the method comprising:

applying a high-frequency power signal to the cathode to thereby generate a first concentration of ions;

decreasing the frequency of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the first concentration of ions around the cathode;

applying the high-frequency power signal to the cathode to thereby generate a second concentration of ions; and

decreasing the frequency of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the second ion concentration of around the cathode.

13. A method for controlling ion density and sputtering rate in a sputtering system, the method comprising:

applying a first pulse-width power signal to the cathode to thereby generate a first concentration of ions;

decreasing the pulse-width of the first pulse-width power signal applied to the cathode to thereby increase the sputtering rate and decrease the first concentration of ion around the cathode;

applying the first pulse-width power signal to the cathode to thereby generate a second concentration of ions; and

decreasing the pulse-width of the first pulse-width power signal applied to the cathode to thereby increase the sputtering rate and decrease the second concentration of ions around the cathode.

14. A method for controlling ion density and sputtering rate in a sputtering system, the method comprising:

applying a high-amplitude power signal to the cathode to thereby generate a first concentration of ions;

decreasing the amplitude of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the first concentration of ions around the cathode;

applying the high-amplitude power signal to the cathode to thereby generate a second concentration of ions; and

decreasing the amplitude of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the second concentration of ions around the cathode.