Manufacturing method of semiconductor integrated circuit device
First Claim
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1. A manufacturing method of a semiconductor integrated circuit device, comprising the steps of:
- (a) preparing a wafer;
(b) placing a carrier having the wafer put therein on a first load port of a first module unit upstream of a first etching unit;
(c) putting the wafer, which is in the carrier on the first load port, in a first etching chamber of the first etching unit via a first chamber of the first module unit;
(d) subjecting the wafer to first plasma etching in the first etching chamber by using a first gas containing fluorine;
(e) putting the wafer, which has finished the first plasma etching, in the carrier on the first load port via the first chamber;
(f) transporting the carrier having the wafer, which has finished the first plasma etching, put therein to a second load port of a second module unit upstream of a second etching unit through a transport route and placing the carrier on the second load port;
(g) putting the wafer, which is in the carrier on the second load port, in a second etching chamber of the second etching unit via a second chamber of the second module unit;
(h) subjecting the wafer to second plasma etching in the second etching chamber by using a second gas containing fluorine; and
(i) putting the wafer, which has finished the second plasma etching, in the carrier on the second load port via the second chamber, wherein the first module unit is equipped with a chemical filter for alkali removal to adjust, in the step (e), the amount of an alkali contaminant in the first chamber to be smaller than the amount of an alkali contaminant outside the first chamber.
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Abstract
To provide a semiconductor integrated circuit device having improved reliability. An EFEM unit upstream of a plasma processing unit is equipped with a chemical filer for alkali removal. In the plasma processing unit, a semiconductor wafer is subjected to plasma processing with a gas containing fluorine. The resulting semiconductor wafer is put in a carrier via a transfer chamber, load lock chamber and EFEM chamber. During this operation, the concentration of amines in the EFEM chamber is adjusted to be lower than that of amines in a clean room outside the chamber by a chemical filter.
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Citations
22 Claims
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1. A manufacturing method of a semiconductor integrated circuit device, comprising the steps of:
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(a) preparing a wafer;
(b) placing a carrier having the wafer put therein on a first load port of a first module unit upstream of a first etching unit;
(c) putting the wafer, which is in the carrier on the first load port, in a first etching chamber of the first etching unit via a first chamber of the first module unit;
(d) subjecting the wafer to first plasma etching in the first etching chamber by using a first gas containing fluorine;
(e) putting the wafer, which has finished the first plasma etching, in the carrier on the first load port via the first chamber;
(f) transporting the carrier having the wafer, which has finished the first plasma etching, put therein to a second load port of a second module unit upstream of a second etching unit through a transport route and placing the carrier on the second load port;
(g) putting the wafer, which is in the carrier on the second load port, in a second etching chamber of the second etching unit via a second chamber of the second module unit;
(h) subjecting the wafer to second plasma etching in the second etching chamber by using a second gas containing fluorine; and
(i) putting the wafer, which has finished the second plasma etching, in the carrier on the second load port via the second chamber, wherein the first module unit is equipped with a chemical filter for alkali removal to adjust, in the step (e), the amount of an alkali contaminant in the first chamber to be smaller than the amount of an alkali contaminant outside the first chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A manufacturing method of a semiconductor integrated circuit device, comprising the steps of:
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(a) preparing a wafer;
(b) placing a carrier having the wafer put therein on a first load port of a first module unit upstream of a first etching unit;
(c) putting the wafer, which is in the carrier on the first load port, in a first etching chamber of the first etching unit via a first chamber of the first module unit;
(d) subjecting the wafer to first plasma etching in the first etching chamber by using a first gas containing fluorine; and
(e) putting the wafer, which has finished the first plasma etching, in the carrier on the first load port via the first chamber, wherein the first module unit is equipped with a chemical filer for alkali removal to adjust, in the step (e), the amount of an alkali contaminant in the first chamber to be smaller than the amount of an alkali contaminant outside the first chamber. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A manufacturing method of a semiconductor integrated circuit device, comprising the steps of:
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(a) preparing a wafer;
(b) placing a carrier having the wafer put therein on a first load port of a first module unit upstream of a first etching unit;
(c) putting the wafer, which is in the carrier on the first load port, in a first etching chamber of the first etching unit via a first chamber of the first module unit;
(d) subjecting the wafer to first plasma etching in the first etching chamber by using a first gas containing fluorine and thereby forming, in the main surface of the wafer, a trench extending in a direction crossing with the main surface; and
(e) putting the wafer, which has finished the first plasma etching, in the carrier on the first load port via the first chamber, wherein the first module unit is equipped with a chemical filer for alkali removal to adjust, in the step (e), the amount of an alkali contaminant in the first chamber to be smaller than the amount of an alkali contaminant outside the first chamber. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification