Method of aligning deposited nanotubes onto an etched feature using a spacer
First Claim
1. A method of forming a nanotube connection aligned to an etched feature, the method comprising:
- forming a raised feature on a substrate surface, the feature including a top surface and sides;
forming a spacer on a side of the raised feature, the spacer being shorter than the raised feature so that the top portion of the raised feature extends above the top of the spacer and a portion of the side of the raised feature is exposed thereby defining a notched region above the spacer and adjacent to the top portion of the raised feature;
depositing and patterning a nanotube layer on the substrate such that the nanotube layer is deposited in the notched region and contacts the exposed portion of the raised feature and overlaps a portion of the top of the raised feature;
forming an insulating layer on the substrate that covers the nanotube layer; and
removing a top portion of the insulating layer to expose a top portion of the etched feature and removing the nanotube layer from on top of the etched feature leaving a portion of the nanotube layer in contact with the etched feature.
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Abstract
A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
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Citations
17 Claims
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1. A method of forming a nanotube connection aligned to an etched feature, the method comprising:
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forming a raised feature on a substrate surface, the feature including a top surface and sides;
forming a spacer on a side of the raised feature, the spacer being shorter than the raised feature so that the top portion of the raised feature extends above the top of the spacer and a portion of the side of the raised feature is exposed thereby defining a notched region above the spacer and adjacent to the top portion of the raised feature;
depositing and patterning a nanotube layer on the substrate such that the nanotube layer is deposited in the notched region and contacts the exposed portion of the raised feature and overlaps a portion of the top of the raised feature;
forming an insulating layer on the substrate that covers the nanotube layer; and
removing a top portion of the insulating layer to expose a top portion of the etched feature and removing the nanotube layer from on top of the etched feature leaving a portion of the nanotube layer in contact with the etched feature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A carbon nanotube electrical connection to a raised feature, the connection comprising:
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a raised feature formed on a substrate, the raised feature having a top portion, and a sidewall;
a sidewall spacer formed next to the sidewall of the raised feature and exposing a portion of the sidewall near the top of the raised feature, thereby defining a notched region above the spacer;
a nanotube layer formed on the substrate such that the nanotube layer contacts an exposed portion of the sidewall and overlies the spacer in the notched region; and
an insulating layer on the substrate that covers the nanotube layer and leaves a portion of the top of the raised feature exposed. - View Dependent Claims (16, 17)
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Specification