Planarization composition
First Claim
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1. CMP abrasive slurry that is substantially free of anhydrous aluminum oxide and comprises liquid and solids wherein said solids comprises:
- (a) in an amount of at least about 90 weight percent based on said solids, at least one non-spherical component having formula Al2O3.xH2O where x ranges from 1 to 3; and
(b) up to about one weight percent based on said solids portion of submicron alpha-alumina.
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Abstract
The present invention provides CMP abrasive slurry that is substantially free of aluminum oxide and comprises liquid and solids wherein the solids comprises: (a) in an amount of at least about 90 weight percent based on the solids, at least one non-spherical component having formula Al2O3.xH2O where x ranges from 1 to 3; and (b) up to about one weight percent based on the solids portion of submicron alpha-alumina. The CMP abrasive slurry may be used to polish metallic or dielectric surfaces in computer wafers.
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Citations
7 Claims
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1. CMP abrasive slurry that is substantially free of anhydrous aluminum oxide and comprises liquid and solids wherein said solids comprises:
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(a) in an amount of at least about 90 weight percent based on said solids, at least one non-spherical component having formula Al2O3.xH2O where x ranges from 1 to 3; and
(b) up to about one weight percent based on said solids portion of submicron alpha-alumina. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification