Planarization composition

• US 20060283093A1
• Filed: 06/15/2005
• Published: 12/21/2006
• Est. Priority Date: 06/15/2005
• Status: Abandoned Application

• Current Assignee: BASF SE
• Original Assignee: BASF SE
• Inventors: Mathur, Sharad, Petrovic, Ivan
• Application Number:
  US11/153,636
• Publication Number:
  US 20060283093A1
• Time in Patent Office: Days
• US Class Current: 51/307
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]

Abstract

The present invention provides CMP abrasive slurry that is substantially free of aluminum oxide and comprises liquid and solids wherein the solids comprises: (a) in an amount of at least about 90 weight percent based on the solids, at least one non-spherical component having formula Al₂O₃.xH₂O where x ranges from 1 to 3; and (b) up to about one weight percent based on the solids portion of submicron alpha-alumina. The CMP abrasive slurry may be used to polish metallic or dielectric surfaces in computer wafers.

Claims

1. CMP abrasive slurry that is substantially free of anhydrous aluminum oxide and comprises liquid and solids wherein said solids comprises:

(a) in an amount of at least about 90 weight percent based on said solids, at least one non-spherical component having formula Al₂O₃.xH₂O where x ranges from 1 to 3; and

(b) up to about one weight percent based on said solids portion of submicron alpha-alumina.

2. The CMP abrasive slurry of claim 1 consisting essentially of said at least one non-spherical component having formula Al₂O₃.xH₂O where x ranges from 1 to 3.

3. The CMP abrasive slurry of claim 1 wherein said non-spherical component is boehmite.

4. The CMP abrasive slurry of claim 1 wherein said non-spherical component comprises kaolin coated with boehmite.

5. A method of planarization metal comprising the step of:

using the CMP abrasive slurry of claim 1 to polish metal.

6. The method of claim 5 wherein planarization occurs in pH acidic conditions.

7. The method of claim 5 wherein said slurry is used to polish copper.