Method of producing composition for forming dielectric film, composition for forming dielectric film, dielectric film and method of producing dielectric film

• US 20060283354A1
• Filed: 06/05/2006
• Published: 12/21/2006
• Est. Priority Date: 12/05/2003
• Status: Abandoned Application

• Current Assignee: JSR Corporation
• Original Assignee: JSR Corporation
• Inventors: Yamada, Kinji, Ryuu, Kyouichirou, Takahashi, Masayuki, Shinoda, Tomotaka
• Application Number:
  US11/446,903
• Publication Number:
  US 20060283354A1
• Time in Patent Office: Days
• US Class Current: 106/287.180
• CPC Class Codes: C01G 23/005 Alkali titanates
• CPC Class Codes: C01G 23/006 Alkaline earth titanates
• CPC Class Codes: C01G 25/00 Compounds of zirconium
• CPC Class Codes: C01G 27/00 Compounds of hafnium
• CPC Class Codes: C01G 33/00 Compounds of niobium
• CPC Class Codes: C01G 35/00 Compounds of tantalum
• CPC Class Codes: C01P 2002/72 by d-values or two theta-values, e.g. as X-ray diagram
• CPC Class Codes: C04B 35/468 based on barium titanates
• CPC Class Codes: C23C 18/1216 Metal oxides C23C18/1212 takes precedence
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material

Abstract

A method of producing a dielectric-film-forming composition including: (a) dissolving a metal hydroxide including a metal A which is at least one metal selected from Li, Na, Ca, Sr, and Ba and at least one of a metal alkoxide and a metal complex including a metal B which is at least one metal selected from Ti, Zr, Hf, Ta, and Nb in an organic solvent to prepare a solution; and (b) allowing a precursor in the solution prepared in the step (a) to react.

Claims

1. A method of producing a dielectric-film-forming composition, comprising:

(a) dissolving a metal hydroxide including a metal A which is at least one metal selected from Li, Na, Ca, Sr, and Ba and at least one of a metal alkoxide and a metal complex including a metal B which is at least one metal selected from Ti, Zr, Hf, Ta, and Nb in an organic solvent to prepare a solution; and

(b) allowing a precursor in the solution prepared in the step (a) to react.

2. The method of producing a dielectric-film-forming composition as defined in claim 1, wherein the reaction in the step (b) is effected by heating the solution prepared in the step (a).

3. The method of producing a dielectric-film-forming composition as defined in claim 1, wherein the reaction in the step (b) is hydrolysis-condensation.

4. The method of producing a dielectric-film-forming composition as defined in claim 3, wherein perovskite-type crystal particles with an average particle diameter of 100 nm or less are formed by the hydrolysis-condensation.

5. The method of producing a dielectric-film-forming composition as defined in claim 4, further comprising:

(c) purifying the perovskite-type crystal particles by using an organic solvent after the step (b).

6. The method of producing a dielectric-film-forming composition as defined in claim 1,

wherein the metal A is at least one metal selected from Ca, Sr, and Ba;

and

wherein the metal B is at least one metal selected from Ti, Zr, and Hf.

7. A dielectric-film-forming composition, produced by the method as defined in claim 1.

8. The dielectric-film-forming composition as defined in claim 7, perovskite-type crystal particles with an average particle diameter of 100 nm or less being dispersed in the dielectric-film-forming composition.

10. A method of forming a dielectric film, comprising:

forming a coating film by using the dielectric-film-forming composition as defined in claim 8;

and

heating the coating film.

12. A dielectric film formed by heating a coating film formed by using the dielectric-film-forming composition as defined in claim 8.

9. A dielectric-film-forming composition, comprising:

(A) a reaction product of A1 and A2, A1 being a metal hydroxide including a metal A which is at least one metal selected from Ba, Sr, and Ca, and A2 being a metal alkoxide including a metal B which is at least one metal selected from Ti, Zr, and Hf and/or a partial hydrolysis-condensation product of the metal alkoxide; and

(B) an organic solvent,

wherein the dielectric-film-forming composition having a molar ratio of the metal A to the metal B of 0.9 to 1.1.

11. A method of forming a dielectric film, comprising:

forming a coating film by using the dielectric-film-forming composition as defined in claim 9;

and

heating the coating film.

13. A dielectric film formed by heating a coating film formed by using the dielectric-film-forming composition as defined in claim 9.