Plasma processing apparatus

• US 20060283550A1
• Filed: 06/06/2006
• Published: 12/21/2006
• Est. Priority Date: 06/06/2005
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Sakaguchi, Masamichi, Kazumi, Hideyuki, Makino, Akitaka, Tamura, Hitoshi, Sano, Akihiro
• Granted Patent: US 8,216,420 B2
• Time in Patent Office: Days
• US Class Current: 156/345.280
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32256 Tuning means
• CPC Class Codes: H01J 37/32302 Plural frequencies

Abstract

A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.

Claims

1. A plasma processing apparatus, comprising:

a vacuum container,

a processing chamber positioned inside said vacuum container, a gas being supplied to said processing chamber,

a support electrode provided inside said processing chamber and supporting a processing-target object,

means for supplying a μ

wave to said processing chamber, and

a cavity unit for propagating said μ

wave, wherein there are provided

μ

-wave introduction means for introducing said μ

wave from a plurality of directions the number of which is larger than two and smaller than four,

means for setting a phase difference between respective μ

waves in said respective directions,

a tuning box for superimposing said respective μ

waves, and

reflection suppression means for suppressing a reflective wave.

5. The plasma processing apparatus according to claim 1, wherein

said μ

-wave introduction means are two rectangular waveguides, said rectangular waveguides being crossed with each other inside said tuning box.

6. The plasma processing apparatus according to claim 1, further comprising:

reflection control means for changing diameter or height of said tuning box.

7. The plasma processing apparatus according to claim 1, wherein

said μ

-wave introduction means is a rectangular waveguide, and further comprising;

means for modifying intensity of said μ

wave within said rectangular waveguide.

8. The plasma processing apparatus according to claim 1, wherein

said μ

-wave introduction means are a plurality of rectangular waveguides, electric power being fed to said plurality of rectangular waveguides by a single power-feeding unit.

9. The plasma processing apparatus according to claim 1, wherein a ring-shaped metal or a second cavity unit is provided in said cavity unit for propagating said μ

wave, and further comprising;

means for changing diameter or height of said cavity unit.

10. The plasma processing apparatus according to claim 1, further comprising:

magnetic-field generation means, time modulation being applied to a coil current which is said magnetic-field generation means.

11. The plasma processing apparatus according to claim 10, wherein

frequency of said time modulation to said coil current is equal to 0.1 to 10 Hz.

2. A plasma processing apparatus, comprising:

a vacuum container,

a processing chamber positioned inside said vacuum container, a gas being supplied to said processing chamber,

a support electrode provided inside said processing chamber and supporting a processing-target object,

means for supplying a μ

wave to said processing chamber, and

a cavity unit for propagating said μ

wave, wherein there are provided

introduction means for introducing said μ

wave from a plurality of directions the number of which is larger than two and smaller than four,

means for setting a phase difference between respective μ

waves in said respective directions,

a tuning box for superimposing said respective μ

waves, and

reflection suppression means for suppressing a reflective wave, and wherein,

when said μ

wave is introduced from two directions, an angle of substantially 90°

is set between said two introduction directions, a phase difference of substantially 90°

being set between said respective electric fields, and

when said μ

wave is introduced from n (>

2) directions, an angle of substantially 360/n°

is set between said respective introduction directions, a phase difference of substantially 360/n°

being set between said respective electric fields.

3. A plasma processing apparatus, comprising:

a vacuum container,

a processing chamber positioned inside said vacuum container, a gas being supplied to said processing chamber,

a support electrode provided inside said processing chamber and supporting a processing-target object,

means for supplying a μ

wave to said processing chamber, and

a cavity unit for propagating said μ

wave, wherein there are provided

rectangular waveguides for introducing said μ

wave from a plurality of directions the number of which is larger than two and smaller than four,

means for setting a phase difference between respective μ

waves in said respective directions,

a tuning box for superimposing said respective μ

waves, and

reflection suppression means for suppressing a reflective wave, and wherein,

said rectangular waveguides the number of which is n are located such that, of rectangular cross-sections of said waveguides, shorter sides are sequentially arranged in an up-and-down direction, and,

when the number of said waveguides is two, said waveguides are located with an angle of substantially 90°

set therebetween, and

when the number of said waveguides is n (>

2), said waveguides are located with an angle of substantially 360/n°

set between said respective waveguides.

4. The plasma processing apparatus according to claim 3, wherein

said μ

wave is supplied by locating said waveguides such that said E surfaces of said waveguides are sequentially arranged in said up-and-down direction, and,

when said number of said waveguides is two, said waveguides are located with said angle of substantially 90°

set therebetween, and

when said number of said waveguides is n (>

2), said waveguides are located with said angle of substantially 360/n°

set between said respective waveguides.