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Method of direct plating of copper on a ruthenium alloy

  • US 20060283716A1
  • Filed: 03/09/2006
  • Published: 12/21/2006
  • Est. Priority Date: 07/08/2003
  • Status: Abandoned Application
First Claim
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1. A method of processing a substrate, comprising:

  • providing a dielecric layer on a substrate;

    forming features into the surface of the dielectric layer;

    depositing an electrically continuous barrier/adhesion layer onto the surface of the dielectric layer, wherein the barrier/adhesion layer comprises an alloy, wherein at least 50 atomic % of the alloy comprises a metal from the group consisting of ruthenium, rhodium, palladium, cobalt, nickel, osmium, iridium, platinum and combinations thereof and wherein the balance of the alloy is selected from the group consisting of tantalum, titanium, zirconium, hafnium, niobium, molybdenum, tungsten and combinations thereof; and

    directly plating a first copper layer onto the barrier/adhesion layer, the first copper layer being an electrically continuous layer, wherein the process of directly plating a first copper layer comprises;

    placing the barrier/adhesion layer into contact with a copper solution, wherein the copper solution comprises copper ions; and

    applying a first plating waveform to the barrier/adhesion layer.

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