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Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power

  • US 20060283835A1
  • Filed: 08/23/2006
  • Published: 12/21/2006
  • Est. Priority Date: 05/16/2003
  • Status: Active Grant
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