Method for correcting electron beam exposure data

• US 20060284120A1
• Filed: 08/18/2006
• Published: 12/21/2006
• Est. Priority Date: 03/30/2004
• Status: Active Grant

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Takita, Hiroshi
• Granted Patent: US 7,569,842 B2
• Time in Patent Office: Days
• US Class Current: 250/492.220
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: H01J 2237/31769 Proximity effect correction
• CPC Class Codes: H01J 37/3026 Patterning strategy
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

First, electron beam exposure data identifiable for each type of pattern of a semiconductor device is inputted (S601). Then, electron beam exposure data on a first type of pattern is not corrected, while electron beam exposure data on a second type of pattern is corrected (S603). The first type of pattern is, for example, a dummy pattern having no influence on the function of the semiconductor device. The second type of pattern is for example, a normal pattern having an influence on the function of the semiconductor device.

Claims

1. A method for correcting electron beam exposure data, comprising:

inputting electron beam exposure data identifiable for each type of pattern of a semiconductor device; and

correcting electron beam exposure data on a second type of pattern without correcting electron beam exposure data on a first type of pattern.

2. The method for correcting the electron beam exposure data according to claim 1, wherein the first type of pattern is a dummy pattern having no influence on a function of the semiconductor device, and the second type of pattern is a normal pattern having an influence on the function of the semiconductor device.

3. The method for correcting the electron beam exposure data according to claim 2, wherein the first type of pattern is a dummy-pattern to planarize the semiconductor device.

4. The method for correcting the electron beam exposure data according to claim 3, wherein the first type of pattern is a dummy pattern in a metal wiring layer.

5. The method for correcting the electron beam exposure data according to claim 1, wherein in said correcting the electron beam exposure data on the second type of pattern, an etching correction is performed.

6. The method for correcting the electron beam exposure data according to claim 5, wherein the etching correction is a correction in which a difference in etching speed depending on patterns is considered.

7. The method for correcting the electron beam exposure data according to claim 1, wherein in said correcting the electron beam exposure data on the second type of pattern, a proximity effect correction is performed.

8. The method for correcting the electron beam exposure data according to claim 7, wherein the proximity effect correction is a correction in which a quantity of electrons reflected from a layer of a resist when an electron beam is irradiated to the resist is considered.

9. The method for correcting the electron beam exposure data according to claim 8, wherein the proximity effect correction is a correction in which a quantity of electrons reflected from a wiring pattern below the resist is considered.

10. The method for correcting the electron beam exposure data according to claim 8, wherein the proximity effect correction is a correction in which a quantity of electrons reflected from a via plug below the resist is considered.

11. The method for correcting the electron beam exposure data according to claim 8, wherein in the proximity effect correction, a backscattering coefficient is determined according to the number of layers below the resist and patterns in the layers to perform the correction.

12. The method for correcting the electron beam exposure data according to claim 8, wherein in the proximity effect correction, a shift size of a pattern width is determined according to the number of layers below the resist and patterns in the layers to perform the correction.

13. The method for correcting the electron beam exposure data according to claim 7, wherein in the proximity effect correction, a center portion and a contour portion of a pattern of electron beam exposure data is divided, and electron beam exposure amounts of the center portion and the contour portion are made different.

14. The method for correcting the electron beam exposure data according to claim 13, wherein in the proximity effect correction, electron beam exposure data for variable rectangular exposure is selected from the electron beam exposure data for the variable rectangular exposure and electron beam exposure data for one-shot exposure, and only regarding the electron beam exposure data for the variable rectangular exposure, the center portion and the contour portion of the pattern of the electron beam exposure data are divided, and the electron beam exposure amounts of the center portion and the contour portion are made different.

15. The method for correcting the electron beam exposure data according to claim 1, wherein in said correcting the electron beam exposure data on the second type of pattern, an etching correction and a proximity effect correction are performed.

16. The method for correcting the electron beam exposure data according to claim 15, wherein

said correcting the electron beam exposure data on the second type of pattern, comprises:

performing the etching correction on electron beam exposure data based on design data on the semiconductor device;

converting the electron beam exposure data on which the etching correction is performed from that for the design data to that for exposure data; and

performing the proximity effect correction on the converted electron beam exposure data.

17. The method for correcting the electron beam exposure data according to claim 15, wherein

said correcting the electron beam exposure data on the second type of pattern, comprises:

subjecting electron beam exposure data to the etching correction;

dividing the electron beam exposure data subjected to the etching correction into units of processing regions; and

subjecting the exposure beam data to the proximity effect correction in each of the processing regions.

18. The method for correcting the electron beam exposure data according to claim 17, wherein the divided processing regions are the same in shape.

19. An electron beam exposure data correcting device, comprising:

an input unit inputting electron beam exposure data identifiable for each type of pattern of a semiconductor device; and

a correction unit correcting electron beam exposure data on a second type of pattern without correcting electron beam exposure data on a first type of pattern.

20. A program product for causing a computer to execute:

inputting electron beam exposure data identifiable for each type of pattern of a semiconductor device; and

correcting electron beam exposure data on a second type of pattern without correcting electron beam exposure data on a first type of pattern.