Current sensor having hall element

• US 20060284611A1
• Filed: 06/08/2006
• Published: 12/21/2006
• Est. Priority Date: 06/21/2005
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Ishio, Seiichiro
• Granted Patent: US 7,253,601 B2
• Time in Patent Office: Days
• US Class Current: 324/117.H
• CPC Class Codes: G01R 15/202 using Hall-effect devices Hall elements in arrangements for measuring electrical power G01R21/08

Abstract

A current sensor includes: a current path; a semiconductor substrate; and a Hall element on the substrate. The Hall element detects a magnetic flux in a magnetic field caused by a detection object current. The Hall element generates a Hall voltage corresponding to the magnetic flux when a driving current flowing in a direction perpendicular to the semiconductor substrate is supplied to the Hall element, and when the magnetic flux having a component parallel to the semiconductor substrate affects the Hall element. The current path is disposed on the semiconductor substrate. The current path is electrically isolated from the Hall element.

Claims

1. A current sensor for detecting a detection object current comprising:

a current path for flowing the detection object current therethrough;

a semiconductor substrate; and

a Hall element disposed on a front side of the semiconductor substrate, wherein

the Hall element is capable of detecting a magnetic flux generated by a magnetic field, which is caused by the detection object current when the detection object current flows through the current path,

the Hall element generates a Hall voltage corresponding to the magnetic flux when a driving current flowing in a direction perpendicular to the semiconductor substrate is supplied to the Hall element, and when the magnetic flux having a component parallel to the semiconductor substrate affects the Hall element,

the current path is disposed on the front side or a back side of the semiconductor substrate, and

the current path is electrically isolated from the Hall element.

2. The sensor according to claim 1, wherein

the current path is integrally coupled with the semiconductor substrate in such a manner that the current path is disposed on the front or back side of the semiconductor substrate through an insulation member in order to isolate from the Hall element.

3. The sensor according to claim 2, wherein

the insulation member is an insulation film, and

the current path is a wiring portion.

4. The sensor according to claim 3, wherein

the wiring portion is integrated with the semiconductor substrate through the insulation film, and

the wiring portion is disposed on the front side of the semiconductor substrate.

5. The sensor according to claim 1, wherein

the Hall element includes a Hall plate as a magnetic flux detection portion, to which the driving current is supplied, and

the current path covers the Hall plate in a plane surface of the front side of the semiconductor substrate.

6. The sensor according to claim 1, further comprising:

a processing circuit portion for controlling the Hall element, wherein

the processing circuit portion is integrally disposed on the semiconductor substrate.

7. The sensor according to claim 1, wherein

the Hall element is a vertical type Hall element,

the Hall element includes a semiconductor region, a separation wall, a first to third current supply terminals and a first and second voltage output terminals,

the semiconductor region is disposed in a surface portion of the semiconductor substrate,

the separation wall includes a frame, a first wall and a second wall,

the frame of the separation wall surrounds the semiconductor region,

the first wall and the second wall are disposed in the frame of the separation wall so that the semiconductor region is divided into a first to third element regions,

each of the first and second walls has a depth, which is shallower than a depth of the semiconductor region so that the first to third element regions are electrically connected together through a part of the semiconductor region under each of the first and second walls,

the first current supply terminal is disposed in the first element region, the second current supply terminal and the first and second voltage output terminals are disposed in the second element region, and the third current supply terminal is disposed in the third element region,

the first and second voltage output terminals are disposed line symmetrically with a pair of the first and third current supply terminals,

the second current supply terminal is disposed at a center between the first and second voltage output terminals,

the Hall element includes a Hall plate as a magnetic flux detection portion,

the Hall plate is provided by a part of the second element region surrounded with the first and second voltage output terminals,

the driving current is supplied to the Hall plate through a pair of the first and second current supply terminals and/or a pair of the second and third current supply terminals, and

the Hall voltage is outputted from the first and second voltage output terminals.

8. The sensor according to claim 7, wherein

the first to third current supply terminals and the first and second voltage output terminals are disposed on the front side of the semiconductor substrate,

the first to third current supply terminals are disposed on a line,

the first and second voltage output terminals and the second current supply terminal are disposed on another line,

the current path is in parallel to the another line, and

the current path is perpendicular to the line.

9. The sensor according to claim 8, wherein

the semiconductor substrate has a first conductive type,

the semiconductor region has a second conductive type, and

the separation wall has the first conductive type.

10. The sensor according to claim 9, wherein

the current path is a wiring portion disposed on the front side of the semiconductor substrate through an insulation film so that the wiring portion is electrically isolated from the Hall element,

the wiring portion is made of metallic film,

the insulation film is made of an oxide film, and

the semiconductor substrate is made of silicon.