Photomask, method of making a photomask and photolithography method and system using the same

• US 20060286460A1
• Filed: 05/23/2006
• Published: 12/21/2006
• Est. Priority Date: 06/15/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Huh, Sungmin, Jeon, Chanuk, Lee, Donggun, Kim, Heebom
• Granted Patent: US 7,629,087 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70425 Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
• CPC Class Codes: G03F 7/70566 Polarisation control

Abstract

A photomask according to the invention provides selective regional optimization of illumination type according to the type of image being formed using the photomask. The photomask include a light polarizing structure which polarizes the light incident on the polarizing structure. Light of a first illumination type from a source in a photolithographic exposure system is incident on the photomask. A portion of the light is incident on the region of the photomask that includes the polarizing structure, and another portion of the light is incident on another region of the photomask that does not include a polarizing structure. The illumination type of the light incident on the polarizing structure is changed to a second illumination type such that light incident on a substrate such as an integrated circuit wafer from the region of the photomask that has the polarizing structure is of the second illumination type. The illumination type of the portion of the light that is not incident on the polarizing structure is not changed, such that light from that portion of the photomask incident on another region of the wafer is of the first illumination type. By selectively regionally controlling illumination type in the photolithography process, resolution of the exposure system is optimized in all regions of the wafer.

Claims

1. A photomask, comprising:

a substrate having a first region and a second region; and

a polarizing structure formed in the substrate in one of the first and second regions, such that when radiation of a first illumination type impinges on the substrate and the polarizing structure, radiation of a second illumination type is formed in the one of the first and second regions and radiation of a third illumination type is formed in the other of the first and second regions.

2. The photomask of claim 1, wherein the first and third illumination types are the same.

3. The photomask of claim 1, wherein the first illumination type is azimuthal polarized illumination.

4. The photomask of claim 3, wherein the azimuthal polarized illumination is azimuthal cross-pole illumination.

5. The photomask of claim 1, wherein the first illumination type is annular type illumination.

6. The photomask of claim 1, wherein the first illumination type is quadrupole type illumination.

7. The photomask of claim 1, wherein the second illumination type is formed by the radiation passing through the first region.

8. The photomask of claim 7, wherein the first region is a polarized region.

9. The photomask of claim 8, wherein the third illumination type is the same as the first illumination type.

10. The photomask of claim 7, wherein the second illumination type is dipole.

11. The photomask of claim 1, further comprising a pattern formed on the substrate.

12. The photomask of claim 11, wherein the pattern comprises chrome.

13. The photomask of claim 11, wherein the polarizing structure is formed in proximity to the pattern.

14. The photomask of claim 11, wherein the polarizing structure is formed on a chrome side of the substrate.

15. The photomask of claim 1, wherein the polarizing structure comprises a pattern of grooves formed in the substrate.

16. The photomask of claim 1, wherein the substrate comprises quartz.

17. A method of making a photomask, comprising:

providing a substrate having a first region and a second region; and

forming a polarizing structure in the substrate in one of the first and second regions, such that when radiation of a first illumination type impinges on the substrate and the polarizing structure, radiation of a second illumination type is formed in the one of the first and second regions and radiation of a third illumination type is formed in the other of the first and second regions.

18. The method of claim 17, wherein the first and third illumination types are the same.

19. The method of claim 17, wherein the first illumination type is azimuthal polarized illumination.

20. The method of claim 19, wherein the azimuthal polarized illumination is azimuthal cross-pole illumination.

21. The method of claim 17, wherein the first illumination type is annular type illumination.

22. The method of claim 17, wherein the first illumination type is quadrupole type illumination.

23. The method of claim 17, wherein the second illumination type is formed by the radiation passing through the first region.

24. The method of claim 23, wherein the first region is a polarized region.

25. The method of claim 24, wherein the third illumination type is the same as the first illumination type.

26. The method of claim 23, wherein the second illumination type is dipole.

27. The method of claim 17, further comprising forming a pattern on the substrate.

28. The method of claim 27, wherein the pattern comprises chrome.

29. The method of claim 27, wherein the polarizing structure is formed in proximity to the pattern.

30. The method of claim 27, wherein the polarizing structure is formed on the surface of a chrome side of the substrate.

31. The method of claim 17, wherein the polarizing structure comprises a pattern of grooves formed in the substrate.

32. The method of claim 17, wherein the substrate comprises quartz.

33. The method of claim 17, further comprising:

forming a layer of opaque material over the substrate;

patterning the layer of opaque material to form a pattern on the substrate;

forming a layer of transparent material over the pattern; and

patterning the transparent material to form the polarizing structure in proximity to the pattern.

34. The method of claim 33, wherein the substrate is made of the transparent material.

35. The method of claim 33, wherein the transparent material comprises quartz.

36. The method of claim 33, wherein the opaque material comprises chrome.

37. The method of claim 17, further comprising:

patterning the substrate to form the polarizing structure;

forming a layer of opaque material over the substrate with the polarizing structure; and

patterning the opaque material to form a pattern in proximity to the polarizing structure.

38. The method of claim 37, wherein the opaque material comprises chrome.

39. The method of claim 17, further comprising:

forming a layer of opaque material over the substrate;

patterning the layer of opaque material to form a pattern on the substrate, such that a portion of the substrate is exposed; and

patterning the exposed portion of the substrate to form the polarizing structure in proximity to the pattern.

40. The method of claim 39, wherein the opaque material comprises chrome.

41. A photolithography method used in fabricating a circuit, comprising:

positioning a photomask over a semiconductor substrate on which the circuit is to be formed, the circuit having first and second regions corresponding to first and second regions of the photomask, the photomask having a polarizing structure formed in one of the first and second regions of the photomask; and

illuminating the photomask with radiation of a first illumination type, such that radiation of a second illumination type impinges on the one of the first and second regions of the substrate corresponding to the one of the first and second regions of the photomask, and radiation of a third illumination type impinges on the other of the first and second regions of the substrate.

42. The method of claim 41, wherein the circuit is a memory circuit.

43. The method of claim 42, wherein the circuit is a DRAM circuit.

44. The method of claim 42, wherein the first region of the circuit comprises memory cells, and the second region of the circuit comprises peripheral circuitry.

45. The method of claim 41, wherein the first and third illumination types are the same.

46. The method of claim 41, wherein the first illumination type is azimuthal polarized illumination.

47. The method of claim 46, wherein the azimuthal polarized illumination is azimuthal cross-pole illumination.

48. The method of claim 41, wherein the first illumination type is annular type illumination.

49. The method of claim 41, wherein the first illumination type is quadrupole type illumination.

50. The method of claim 41, wherein the second illumination type is formed by the radiation passing through the first region.

51. The method of claim 50, wherein the first region is a polarized region.

52. The method of claim 51, wherein the third illumination type is the same as the first illumination type.

53. The method of claim 50, wherein the second illumination type is dipole.

54. A photomask, comprising:

a substrate having a first region and a second region; and

a polarizing structure formed in the substrate in one of the first and second regions;

wherein

the polarizing structure is formed on the surface of a chrome side of the substrate.

55. A method of making a photomask, comprising:

providing a substrate having a first region and a second region; and

forming a polarizing structure in the substrate in one of the first and second regions;

wherein

the polarizing structure is formed on the surface of a chrome side of the substrate.