Method for fabricating semiconductor device and semiconductor device

• US 20060286816A1
• Filed: 06/21/2006
• Published: 12/21/2006
• Est. Priority Date: 06/21/2005
• Status: Abandoned Application

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nakagawa, Hideo, Aoi, Nobuo
• Application Number:
  US11/471,491
• Publication Number:
  US 20060286816A1
• Time in Patent Office: Days
• US Class Current: 438/790
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76886 Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances

Abstract

A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond.

Claims

1. A method for fabricating a semiconductor device comprising the steps of:

forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and

forming an interlayer insulating film on said nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—

O—

Si) bond.

2. The method for fabricating a semiconductor device of claim 1,

wherein a layer of SiCN is formed in the step of forming a nitrogen-containing layer.

3. The method for fabricating a semiconductor device of claim 2,

wherein an inert gas is used as a diluent gas in the step of forming a nitrogen-containing layer.

4. The method for fabricating a semiconductor device of claim 1,

wherein said nitrogen-containing layer is formed by nitriding said exposed portion through plasma processing performed in an atmosphere including nitrogen.

5. The method for fabricating a semiconductor device of claim 1,

wherein said nitrogen-containing layer is formed by nitriding said exposed portion through plasma processing performing in an atmosphere including a nitrogen-containing compound.

6. The method for fabricating a semiconductor device of claim 5,

wherein said nitrogen-containing compound is ammonia or an amine derivative.

7. The method for fabricating a semiconductor device of claim 1,

wherein said nitrogen-containing layer is formed by implanting nitrogen ions into said exposed portion.

8. A semiconductor device comprising:

a nitrogen-containing layer formed in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and

an interlayer insulating film formed on said nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—

O—

Si) bond.