Method for silicon based dielectric chemical vapor deposition
First Claim
1. A method for depositing a silicon-containing film on a substrate, the method comprising:
- heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius;
flowing a nitrogen and carbon containing chemical into the processing chamber;
flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and
depositing a silicon and nitrogen containing film on the substrate.
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Abstract
Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
416 Citations
29 Claims
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1. A method for depositing a silicon-containing film on a substrate, the method comprising:
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heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius;
flowing a nitrogen and carbon containing chemical into the processing chamber;
flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and
depositing a silicon and nitrogen containing film on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 29)
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24. A method for depositing a silicon-containing layer on a substrate, the method comprising:
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heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius;
maintaining a pressure within the processing chamber between about 10 to 740 Torr. flowing a (CH3)3—
N into the processing chamber;
purging the process chamber with argon;
flowing a trisilylamine into the processing chamber;
purging the process chamber with argon; and
depositing a layer containing silicon and nitrogen on the substrate. - View Dependent Claims (25, 26, 27, 28)
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Specification