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Method for silicon based dielectric chemical vapor deposition

  • US 20060286818A1
  • Filed: 06/17/2005
  • Published: 12/21/2006
  • Est. Priority Date: 06/17/2005
  • Status: Active Grant
First Claim
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1. A method for depositing a silicon-containing film on a substrate, the method comprising:

  • heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius;

    flowing a nitrogen and carbon containing chemical into the processing chamber;

    flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and

    depositing a silicon and nitrogen containing film on the substrate.

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