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Method for silicon based dielectric deposition and clean with photoexcitation

  • US 20060286819A1
  • Filed: 06/21/2005
  • Published: 12/21/2006
  • Est. Priority Date: 06/21/2005
  • Status: Abandoned Application
First Claim
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1. A method for depositing a silicon and nitrogen-containing film on a substrate, the method comprising:

  • positioning a substrate on a substrate support disposed in a processing chamber;

    generating a beam or flux of energy of between about 1 to about 10 eV;

    heating the substrate;

    flowing a nitrogen-containing chemical into the processing chamber;

    flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber;

    depositing a silicon and nitrogen-containing film on the heated substrate disposed in the processing chamber; and

    transferring the energy into the processing chamber during the depositing of the silicon and nitrogen-containing film.

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