Method for silicon based dielectric deposition and clean with photoexcitation
First Claim
1. A method for depositing a silicon and nitrogen-containing film on a substrate, the method comprising:
- positioning a substrate on a substrate support disposed in a processing chamber;
generating a beam or flux of energy of between about 1 to about 10 eV;
heating the substrate;
flowing a nitrogen-containing chemical into the processing chamber;
flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber;
depositing a silicon and nitrogen-containing film on the heated substrate disposed in the processing chamber; and
transferring the energy into the processing chamber during the depositing of the silicon and nitrogen-containing film.
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Abstract
Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
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Citations
35 Claims
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1. A method for depositing a silicon and nitrogen-containing film on a substrate, the method comprising:
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positioning a substrate on a substrate support disposed in a processing chamber;
generating a beam or flux of energy of between about 1 to about 10 eV;
heating the substrate;
flowing a nitrogen-containing chemical into the processing chamber;
flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber;
depositing a silicon and nitrogen-containing film on the heated substrate disposed in the processing chamber; and
transferring the energy into the processing chamber during the depositing of the silicon and nitrogen-containing film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification