METHOD AND APPARATUS FOR PERFORMING HYDROGEN OPTICAL EMISSION ENDPOINT DETECTION FOR PHOTORESIST STRIP AND RESIDUE REMOVAL
First Claim
1. A method, comprising:
- positioning a substrate comprising a photoresist layer into a processing chamber;
processing the photoresist layer using a multiple step plasma process; and
monitoring the plasma for a hydrogen optical emission during the multiple step plasma process;
wherein the multiple step plasma process comprises;
removing a bulk of the photoresist layer using a bulk removal step; and
switching to an overetch step in response to the monitored hydrogen optical emission.
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Abstract
Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.
119 Citations
23 Claims
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1. A method, comprising:
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positioning a substrate comprising a photoresist layer into a processing chamber;
processing the photoresist layer using a multiple step plasma process; and
monitoring the plasma for a hydrogen optical emission during the multiple step plasma process;
wherein the multiple step plasma process comprises;
removing a bulk of the photoresist layer using a bulk removal step; and
switching to an overetch step in response to the monitored hydrogen optical emission. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13)
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14. A method of etching a photoresist layer comprising:
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positioning a substrate comprising a photoresist layer into a processing chamber;
processing the photoresist layer using a multiple step plasma process; and
monitoring the plasma for both by-product optical emission and a reactant optical emission during the multiple step plasma process;
wherein the multiple step plasma process comprises;
removing a bulk of the photoresist layer using a bulk removal step; and
switching to an overetch step in response to the monitored hydrogen optical emission. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification