Infrared radiation detector
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Abstract
Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.
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Citations
45 Claims
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1-24. -24. (canceled)
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25. An electronic device comprising:
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a substrate;
a transistor included in the substrate; and
a silicon-germanium (Si—
Ge) structural layer coupled with the transistor, wherein the structural layer;
(i) has a stress in a predetermined range, the predetermined range for the stress being selected prior to deposition of the structural layer; and
(ii) is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification