Silicon carbide devices with hybrid well regions
First Claim
1. A vertical silicon carbide MOSFET comprising:
- a hybrid p-type silicon carbide well region on a silicon carbide substrate;
an n-type silicon carbide source region in the hybrid p-type silicon carbide well region;
an n-type silicon carbide channel region adjacent and spaced apart from the n-type silicon carbide source region;
a gate dielectric on the n-type silicon carbide channel region and at least a portion of the n-type silicon carbide source region;
a gate contact on the gate dielectric;
a first contact on a portion of the hybrid p-type silicon carbide well region and the n-type silicon carbide source region; and
a second contact on the substrate.
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Accused Products
Abstract
MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid well region may include an implanted p-type silicon carbide well portion in a p-type silicon carbide epitaxial layer, an implanted p-type silicon carbide contact portion that contacts the implanted p-type silicon carbide well portion and extends to a surface of the p-type epitaxial layer and/or an epitaxial p-type silicon carbide portion, at least a portion of the epitaxial p-type silicon carbide well portion corresponding to a p-type channel region of the MOSFET.
82 Citations
23 Claims
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1. A vertical silicon carbide MOSFET comprising:
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a hybrid p-type silicon carbide well region on a silicon carbide substrate;
an n-type silicon carbide source region in the hybrid p-type silicon carbide well region;
an n-type silicon carbide channel region adjacent and spaced apart from the n-type silicon carbide source region;
a gate dielectric on the n-type silicon carbide channel region and at least a portion of the n-type silicon carbide source region;
a gate contact on the gate dielectric;
a first contact on a portion of the hybrid p-type silicon carbide well region and the n-type silicon carbide source region; and
a second contact on the substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A unit cell of a vertical silicon carbide power device, comprising:
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a first p-type silicon carbide epitaxial layer on an n-type silicon carbide drift region on an n-type silicon carbide substrate;
at least one first region of n-type silicon carbide which extends through the first p-type silicon carbide epitaxial layer to the n-type drift region;
at least one second region of n-type silicon carbide which is adjacent and spaced apart from the first region of n-type silicon carbide;
at least one implanted buried region of p-type silicon carbide in the first p-type silicon carbide epitaxial layer, the at least one implanted buried region having a higher carrier concentration than the p-type silicon carbide epitaxial layer and being positioned between the at least one second region of n-type silicon carbide and the drift region and being substantially aligned with a side of the at least one second region of n-type silicon carbide adjacent the at least one first region of n-type silicon carbide; and
a gate dielectric over the first region of n-type silicon carbide in the first p-type silicon carbide layer and at least a portion of the second region of n-type silicon carbide. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A silicon carbide Metal-Oxide Semiconductor (MOS) gated device, comprising:
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a hybrid silicon carbide well region of a first conductivity type, comprising;
a first silicon carbide epitaxial layer of a first conductivity type;
an implanted well portion of the first conductivity type in the silicon carbide epitaxial layer; and
an implanted contact portion that contacts the implanted well portion and extends to a surface of the epitaxial layer;
a first silicon carbide region of a second conductivity type at least in part within the hybrid silicon carbide well region;
a second silicon carbide region of the second conductivity type adjacent the well region and spaced apart from the first silicon carbide region;
a gate dielectric on the second silicon carbide region and at least a portion of the first silicon carbide region;
a gate contact on the gate dielectric; and
wherein an unimplanted portion of the epitaxial layer corresponds to a channel region of the device. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification