Method for preparing light emitting diode device having heat dissipation rate enhancement
First Claim
1. A method for fabricating a light emitting diode device which has a light emitting diode section grown on a sapphire substrate, the method comprising the steps of:
- (a) bonding the light emitting diode section grown on a first surface of the sapphire substrate to a first surface of a first substrate by means of a first binder;
(b) bonding a second surface of the first substrate to a first surface of a second substrate by means of a second binder;
(c) removing the second substrate from a bonded structure obtained as a result of step (b) after polishing a second surface of the sapphire substrate;
(d) separating the bonded structure into unit chips after the second substrate has been removed from the bonded structure; and
(e) bonding the second surface of the polished sapphire substrate provided in each unit chip to a lead frame, and then removing the first substrate.
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Accused Products
Abstract
A method for fabricating an LED having section grown on a sapphire substrate, a boded structure, and a unit chip separated from the bonded structure. The method includes (a) bonding the section grown on a first surface of the sapphire substrate to a first surface of a first substrate with a first binder; (b) bonding a second surface of the first substrate to a first surface of a second substrate with a second binder; (c) removing the second substrate from a bonded structure obtained as a result of step (b) after polishing a second surface of the sapphire substrate; (d) separating the bonded structure into unit chips after the second substrate has been removed; and (e) bonding the second surface of the polished sapphire substrate provided in each unit chip to a lead frame, and removing the first substrate. This method improves heat dissipation efficiency.
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Citations
24 Claims
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1. A method for fabricating a light emitting diode device which has a light emitting diode section grown on a sapphire substrate, the method comprising the steps of:
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(a) bonding the light emitting diode section grown on a first surface of the sapphire substrate to a first surface of a first substrate by means of a first binder;
(b) bonding a second surface of the first substrate to a first surface of a second substrate by means of a second binder;
(c) removing the second substrate from a bonded structure obtained as a result of step (b) after polishing a second surface of the sapphire substrate;
(d) separating the bonded structure into unit chips after the second substrate has been removed from the bonded structure; and
(e) bonding the second surface of the polished sapphire substrate provided in each unit chip to a lead frame, and then removing the first substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A bonded structure comprising:
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(a) a first substrate made from a material suitable for a breaking process; and
(b) a sapphire substrate formed on a first surface thereof with a light emitting diode section, wherein a first surface of the first substrate is bonded to the light emitting diode section of the sapphire substrate by means of a binder. - View Dependent Claims (18, 19, 23)
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17. A bonded structure comprising:
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(a) a first substrate formed on at least one surface thereof with at least one recess aligned in a regular interval; and
(b) a sapphire substrate formed on a first surface thereof with a light emitting diode section, wherein a first surface of the first substrate is bonded to the light emitting diode section of the sapphire substrate by means of a binder. - View Dependent Claims (20, 21, 22)
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24. A unit chip obtained by separating a bonded structure consisting of a first substrate and a sapphire substrate after polishing the sapphire substrate such that the sapphire substrate has a thickness in a range of about 5 to 80 μ
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Specification