Semiconductor device and manufacturing method of the same

• US 20060289953A1
• Filed: 03/28/2006
• Published: 12/28/2006
• Est. Priority Date: 06/27/2005
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sakuma, Kiwamu, Koyama, Masato, Tsuchiya, Yoshinori
• Application Number:
  US11/390,288
• Publication Number:
  US 20060289953A1
• Time in Patent Office: Days
• US Class Current: 257/412
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors

Abstract

A semiconductor device includes a first semiconductor layer of a first conductivity type, a first gate insulating film, a first gate electrode and first source/drain regions. The first gate insulating film is formed on the first semiconductor layer. The first gate electrode is formed on the first gate insulating film. The first gate electrode includes crystal grains of a first metal consisting of Ru, and a second metal selected from the group consisting of W, Ni, Mo, Rh, Pd, Re Ir, and Pt. The second metal is segregated at a grain boundary between the crystal grains of the first metal. The first source/drain regions are formed in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.

Claims

1. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a first gate insulating film formed on the first semiconductor layer;

a first gate electrode formed on the first gate insulating film, the first gate electrode comprising;

crystal grains of a first metal consisting of Ru; and

a second metal selected from the group consisting of W, Ni, Mo, Rh, Pd, Re Ir, and Pt, the second metal segregated at a grain boundary between the crystal grains of the first metal; and

first source/drain regions formed in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.

2. The semiconductor device according to claim 1, wherein:

the first gate electrode comprises;

a first layer comprising;

the crystal grains of the first metal; and

the second metal segregated at the grain boundary between the crystal grains of the first metal; and

a second layer formed on the first layer, the second layer comprising the second metal.

3. The semiconductor device according to claim 2, wherein at least a part of the second metal of the first layer is in contact with the first gate insulating film.

4. The semiconductor device according to claim 2, wherein the first layer is in a range of 1 nm to 25 nm in thickness.

5. The semiconductor device according to claim 1, further comprising an insulating layer disposed under a region including the first gate insulating film and the first source/drain regions and under the first semiconductor layer.

6. The semiconductor device according to claim 2, wherein the content of the second metal in the crystal grain of the first metal is 5% or less.

7. The semiconductor device according to claim 2, wherein the content of the second metal in the crystal grains of the first metal is less than the content of the second metal in a boundary between the first layer and the first gate insulating film.

8. The semiconductor device according to claim 1, wherein the first gate insulating film comprises no second material.

9. The semiconductor device according to claim 1, further comprising:

a second semiconductor layer of a second conductivity type different from the first conductivity type;

a second gate insulating film formed on the second semiconductor layer;

a second gate electrode formed on the second gate insulating film;

second source/drain regions formed in the second semiconductor layer, across the second gate insulating film from each other in a gate length direction of the second gate insulating film; and

a semiconductor substrate formed under the first semiconductor layer and the second semiconductor layer.

10. The semiconductor device according to claim 9, wherein the first conductivity type is an n type and the second conductivity type is a p type.

11. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a first gate insulating film formed on the first semiconductor layer;

a first gate electrode formed on the first gate insulating film, the first gate electrode comprising;

crystal grains of a first metal consisting of Pt; and

a second metal selected from the group consisting of W, Re, Rh, Pd, Ir, and Ru, the second metal segregated at a grain boundary between the crystal grains of the first metal; and

first source/drain regions formed in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.

12. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a first gate insulating film formed on the first semiconductor layer;

a first gate electrode formed on the first gate insulating film, the first gate electrode comprising;

crystal grains of a first metal consisting of Ir; and

a second metal selected from the group consisting of Re, Rh, Ni, Pd, Pt and Ru, the second metal segregated at a grain boundary between the crystal grains of the first metal; and

first source/drain regions formed in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.

13. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a first gate insulating film formed on the first semiconductor layer;

a first gate electrode formed on the first gate insulating film, the first gate electrode comprising;

crystal grains of a first metal consisting of Re; and

a second metal selected from the group consisting of Rh, Ni, Pd, Ir, Pt and Ru, the second metal segregated at a grain boundary between the crystal grains of the first metal; and

first source/drain regions formed in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.

14. A method for manufacturing a semiconductor device, the method comprising:

forming a first gate insulating film on a first semiconductor layer of a first conductivity type;

forming, on the first gate insulating film, a first gate electrode comprising;

a layer comprising crystal grains of a first metal consisting of Ru; and

a layer comprising a second metal selected from the group consisting of W, Ni, Mo, Rh, Pd, Re, Ir, and Pt;

segregating the second metal at a grain boundary between the crystal grains of the first metal; and

forming first source/drain regions in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.

15. The method according to claim 14, wherein the segregating comprises heating the first insulating film and the first gate electrode.

16. The method according to claim 15, wherein the first insulating film and the first gate electrode are heated at 500 degrees Celsius to 950 degrees Celsius.

17. The method according to claim 16, wherein the first insulating film and the first gate electrode are heated at 750 degrees Celsius to 850 degrees Celsius.

18. The method according to claim 14, further comprising:

forming the first semiconductor layer on a semiconductor substrate;

forming a second semiconductor layer of a second conductivity type on the semiconductor substrate, the second conductivity type different from the first conductivity type;

forming a second gate insulating film on the second semiconductor layer;

forming, on the second gate insulating film, a second gate electrode comprising a layer comprising W and another semiconductor layer;

performing silicidation of the layer comprising W and the another semiconductor layer; and

forming second source/drain regions in the second semiconductor layer, wherein;

the second metal comprises W.