Semiconductor device

• US 20060289972A1
• Filed: 06/26/2006
• Published: 12/28/2006
• Est. Priority Date: 06/28/2005
• Status: Active Grant

• Current Assignee: Socionext Inc.
• Original Assignee: Fujitsu Limited
• Inventors: Aiba, Kazuyuki, Takashima, Akira, Nishimura, Takao, Nakamura, Kouichi, Kumagaya, Yoshikazu
• Granted Patent: US 8,076,785 B2
• Time in Patent Office: Days
• US Class Current: 257/666
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05005 Structure
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05541 Structure
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05684 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13027 the bump connector being offset with respect to the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 2224/1411 : the bump connectors being bonded to at least one common bonding area
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/17107 : the bump connectors connecting two common bonding areas
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73207 : Bump and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81194 : Lateral distribution of the bump connectors
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2225/06558 : the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49833 : the chip support structure consisting of a plurality of insulating substrates
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3841 : Solder bridging

Abstract

A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

Claims

1. A semiconductor device, comprising:

a semiconductor element having a main surface where an outside connection terminal pad is provided;

wherein the semiconductor element is connected to a conductive layer on a supporting bo ard via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and

the connection member commonly covers the convex-shaped outside connection terminals.

5. The semiconductor device as claimed in claim 1,

wherein the semiconductor element works as a first semiconductor element, and

a second semiconductor element is adhered and fixed on the first semiconductor element.

6. The semiconductor device as claimed in claim 1,

wherein the outside connection terminal pads are provided in the substantially center of the semiconductor substrate so as to form a line.

7. The semiconductor device as claimed in claim 5,

wherein the first semiconductor element, the second semiconductor element and the supporting board are sealed by sealing resin.

2. A semiconductor device, comprising:

a semiconductor element

wherein a plurality of outside connection terminal pads are provided on a main surface of a semiconductor substrate; and

at least a single first convex-shaped outside connection terminal is provided on the outside connection terminal pad; and

a supporting board

wherein a plurality of conductive layers corresponding to the outside connection terminal pads are provided; and

at least a single second convex-shaped outside connection terminal is provided on the conductive layer;

wherein the first convex-shaped outside connection terminal is connected to the conductive layer via a connection member; and

the second convex-shaped outside connection terminal is connected to the outside connection terminal pad via the connection member.

3. The semiconductor device as claimed in claim 2,

wherein position of the first convex-shaped outside connection terminal on the outside connection terminal pad and position of the second convex-shaped outside connection terminal on the conductive layer are offset in a width direction of the semiconductor device;

and

position of a head end surface of the first convex-shaped outside connection terminal and position of a head end surface of the second convex-shaped outside connection terminal are overlapped in a thickness direction of the semiconductor device.

4. The semiconductor device as claimed in claim 3,

wherein the number of at least either of the first convex-shaped outside connection terminal or the second convex-shaped outside connection terminal is plural, and

the second convex-shaped outside connection terminal is provided between neighboring first convex-shaped outside connection terminals or the first convex-shaped outside connection terminal is provided between neighboring second convex-shaped outside connection terminals.

8. A semiconductor device, comprising:

a supporting board; and

a semiconductor element mounted over a wiring board which wiring board is mounted over the supporting board, the semiconductor element connected to the supporting board via the wiring board;

wherein a plurality of semiconductor element outside connection terminal pads is provided on a main surface of a semiconductor substrate of the semiconductor element, the main surface facing the wiring board, and

at least a single first convex-shaped outside connection terminal is provided on the semiconductor element outside connection terminal pad;

a plurality of wiring board outside connection terminal pads is provided on a main surface of the wiring board, the main surface facing the semiconductor element, and

at least a single second convex-shaped outside connection terminal is provided on the wiring board outside connection terminal pad;

the first convex-shaped outside connection terminal is connected to the wiring board outside connection terminal pad via a connection member; and

the second convex-shaped outside connection terminal is connected to the semiconductor element outside connection terminal pad via the connection member.

9. The semiconductor device as claimed in claim 8,

wherein position of the first convex-shaped outside connection terminal on the semiconductor element outside connection terminal pad and position of the second convex-shaped outside connection terminal on the wiring board outside connection terminal pad are offset in a width direction of the semiconductor device;

and

position of a head end surface of the first convex-shaped outside connection terminal and position of a head end surface of the second convex-shaped outside connection terminal are overlapped in a thickness direction of the semiconductor device.

10. The semiconductor device as claimed in claim 9,

wherein the number of at least either of the first convex-shaped outside connection terminal or the second convex-shaped outside connection terminal is plural, and

the second convex-shaped outside connection terminal is provided between neighboring first convex-shaped outside connection terminals or the first convex-shaped outside connection terminal is provided between neighboring second convex-shaped outside connection terminals.

11. The semiconductor device as claimed in claim 8,

wherein the wiring board is made of material selected from a group consisting of an organic material, ceramic and glass.

12. The semiconductor device as claimed in claim 8,

wherein the wiring board is made of silicon.

13. The semiconductor device as claimed in claim 12,

wherein a semiconductor integrated circuit is formed on the wiring board.

14. The semiconductor device as claimed in claim 8,

wherein the semiconductor element, the wiring board and the supporting board are sealed by sealing resin.