Semiconductor device

• US 20060290431A1
• Filed: 08/17/2006
• Published: 12/28/2006
• Est. Priority Date: 08/08/2003
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Shimizu, Toshihiko, Kusakari, Yuri, Matsunaga, Yoshikuni
• Granted Patent: US 7,348,856 B2
• Time in Patent Office: Days
• US Class Current: 330/307
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 Multilayer substrate
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H03F 2200/111 : the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/451 : the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/68 : Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602

Abstract

Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.

Claims

1. A semiconductor device, comprising:

a plurality of amplifying stages each comprising amplifier circuits; and

secondary circuits,

said all amplifying stages and said secondary circuits being provided over a same semiconductor chip,

wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate of silicon of the semiconductor chip,

wherein the amplifier circuits are disposed on a periphery of a main surface of the semiconductor chip, and

wherein the secondary circuits are placed inside the periphery of the main surface of the semiconductor chip.

2. A semiconductor device according to claim 1, wherein resistivity of the semiconductor substrate is smaller than 10 mΩ

·

cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the silicon substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode over the back surface of the semiconductor substrate.

3. A semiconductor device of a multiband system, which is capable of coping with high frequency signals lying in a plurality of different frequency bands, said semiconductor device comprising:

a plurality of amplifier circuits which respectively adapt to the high frequency signals lying in the plurality of different frequency bands; and

a plurality of amplifying stages which constitute the plurality of amplifier circuits respectively,

wherein each of the plurality of amplifying stages are provided over one semiconductor chip,

wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate formed of silicon of the semiconductor chip, and

wherein the amplifying stages corresponding to a final stage of the plurality of amplifier circuits are placed at sides of the semiconductor chip opposite to each other.

4. A semiconductor device according to claim 3, wherein the final amplifying stages of the respective amplifier circuits are disposed to be point-symmetric to each other.

5. A semiconductor device according to claim 3, wherein resistivity of the semiconductor substrate is less than 10 mΩ

·

cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the semiconductor substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode over the back surface of the semiconductor substrate, and

wherein the semiconductor chip is provided with passive elements for matching circuits, and a bias circuit and a control circuit for the amplifier circuits.

6. A semiconductor device according to claim 4, wherein the plurality of amplifier circuits respectively include three amplifying stages.