Semiconductor half-bridge module with low inductance

• US 20060290689A1
• Filed: 06/26/2006
• Published: 12/28/2006
• Est. Priority Date: 06/24/2005
• Status: Abandoned Application

• Current Assignee: ASBU Holdings, LLC
• Original Assignee: ASBU Holdings, LLC
• Inventors: Nedic, Velimir, Grant, William, Marcinkowski, Jack, Lin, Heny
• Application Number:
  US11/474,714
• Publication Number:
  US 20060290689A1
• Time in Patent Office: Days
• US Class Current: 345/204
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49051 Connectors having different shapes
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01076 Osmium [Os]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A power module that includes embedded power bus bars and output bus arranged to lower the parasitic inductance.

Claims

1. A power module comprising:

a frame;

a first bus connectable to one pole of a power source and embedded within said frame;

a second bus connectable to another pole of a power source and embedded within said frame;

an output bus embedded within said frame and spaced from but disposed opposite to said first and said second bus bars; and

a power circuit including a high side power semiconductor switch and a low side power semiconductor switch, said high side power semiconductor switch being electrically connected to said first bus and said output bus, and said low side power semiconductor switch being electrically connected to said second bus and said output bus.

2. The module of claim 1, wherein said frame is molded.

3. The module of claim 1, wherein first and said second bus bars are on one plane and said output bus is on another plane below said one plane.

4. The module of claim 1, further comprising a first substrate integrated with said frame and a second substrate integrated with said frame, wherein said high side power semiconductor switch is disposed on said first substrate and said low side power semiconductor switch is disposed on said second substrate.

5. The module of claim 4, wherein said first substrate is disposed lateral to said first bus, said second bus and said output bus, and said second substrate is disposed lateral to said first bus, said second bus, and said output bus and opposite said first substrate, whereby said first bus, said second bus and said output bus are disposed between said first substrate, and said second substrate.

6. The module of claim 1, further comprising a high side diode parallel connected with said high side power semiconductor switch and a low side diode parallel connected with said low side power semiconductor switch.

7. The module of claim 1, wherein said power circuit further includes a plurality of high side power semiconductor switches parallel connected with said high side power semiconductor switch, and a plurality of low side power semiconductor switches parallel connected with said low side power semiconductor switch.

8. The module of claim 7, wherein said plurality of high side power semiconductor switches includes three switches and said plurality of low side power semiconductor switches includes three switches.

9. The module of claim 7, further comprising a diode parallel connected with each said high side switch and each said low side switch.

10. The module of claim 7, wherein said first substrate includes a common gate track for all said high side switches and said second substrate includes a common gate track for all said low side switches.

11. The module of claim 7, wherein said first substrate includes an emitter sense track for all said high side switches and said second substrate includes an emitter sense track for all said low side switches.

12. The module of claim 7, wherein said high side switches share a common collector pad on said first substrate, and said low side switches share a common collector pad on said second substrate.

13. The module of claim 12, further comprising a collector sense lead electrically connected to said common collector pad on said first substrate, and a collector sense lead electrically connected to said common collector pad on said second substrate.

14. The module of claim 1, further comprising a plurality of high side I/O leads for said high side power semiconductor switch integrated with said frame, and a plurality of low side I/O leads for said low side power semiconductor switch integrated with said frame, wherein said I/O leads include a temperature sense lead, collector sense lead, an emitter sense lead and gate lead.

15. The module of claim 7, further comprising a plurality of high side I/O leads for said high side power semiconductor switches integrated with said frame, and a plurality of low side I/O leads for said low side power semiconductor switches integrated with said frame, wherein said I/O leads include a temperature sense lead, collector sense lead, an emitter sense lead and gate lead.

16. The module of claim 4, wherein said first substrate and said second substrate each is an IMS, or a DBC.

17. The module of claim 1, wherein said high side and said low side power semiconductor switches are IGBTs, or power MOSFETs.

18. The module of claim 7, wherein said high side and said low side power semiconductor switches are IGBTs, or power MOSFETs.

19. The module of claim 1, wherein said first bus and said second bus are disposed laterally, side-by-side, and parallel to one another and said output bus is disposed below said first bus and said second bus.