Non-volatile semiconductor memory device
First Claim
1. A non-volatile semiconductor memory device comprising:
- a memory cell array having electrically rewritable and non-volatile semiconductor memory cells arranged therein; and
a sense amplifier circuit configured to read data of and hold data to be written into the memory cell array, the device being internally controlled to execute a write sequence with write pulse applications and write-verify operations repeated for writing a set of memory cells selected in the memory cell array, wherein the sense amplifier circuit performs a write speed verify operation for detecting write speed of plural memory cells to be written into a certain data state after a certain write pulse application at the beginning of the write sequence, thereby getting discriminating data for classifying the plural memory cells into first and second cell groups, the write speed of the memory cell in the second cell group being lower than that in the first cell group, and wherein after the write speed verify operation, the first and second cell groups are alternately written on different write conditions from each other with reference to the discriminating data.
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Abstract
A non-volatile semiconductor memory device includes a memory cell array and a sense amplifier, the device being internally controlled to execute a write sequence with write pulse applications and write-verify operations repeated for writing a set of memory cells selected in the memory cell array, wherein the sense amplifier performs a write speed verify operation for detecting write speed of plural memory cells to be written into a certain data state after a certain write pulse application at the beginning of the write sequence, thereby getting discriminating data for classifying the plural memory cells into first and second cell groups, and after the write speed verify operation, the first and second cell groups are alternately written on different write conditions from each other with reference to the discriminating data.
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Citations
18 Claims
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1. A non-volatile semiconductor memory device comprising:
- a memory cell array having electrically rewritable and non-volatile semiconductor memory cells arranged therein; and
a sense amplifier circuit configured to read data of and hold data to be written into the memory cell array, the device being internally controlled to execute a write sequence with write pulse applications and write-verify operations repeated for writing a set of memory cells selected in the memory cell array, whereinthe sense amplifier circuit performs a write speed verify operation for detecting write speed of plural memory cells to be written into a certain data state after a certain write pulse application at the beginning of the write sequence, thereby getting discriminating data for classifying the plural memory cells into first and second cell groups, the write speed of the memory cell in the second cell group being lower than that in the first cell group, and wherein after the write speed verify operation, the first and second cell groups are alternately written on different write conditions from each other with reference to the discriminating data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- a memory cell array having electrically rewritable and non-volatile semiconductor memory cells arranged therein; and
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16. A method of writing data into a set of memory cells in a non-volatile semiconductor memory device with write pulse applications and write-verify operations repeated, comprising:
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performing a write speed verify operation for detecting write speed of plural memory cells to be written into a certain data state after a certain write pulse application at the beginning of a write sequence, thereby getting discriminating data for classifying the plural memory cells into first and second cell groups, the write speed of the memory cell in the second cell group being lower than that in the first cell group; and
alternately writing the first and second cell groups on different write conditions from each other with reference to the discriminating data after the write speed verify operation. - View Dependent Claims (17, 18)
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Specification