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Method of production of silicon carbide single crystal

  • US 20060292057A1
  • Filed: 11/19/2004
  • Published: 12/28/2006
  • Est. Priority Date: 11/25/2003
  • Status: Active Grant
First Claim
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1. A method of production of a silicon carbide single crystal by precipitation from a solution using a temperature gradient furnace giving a temperature gradient to a columnar workpiece in its longitudinal direction, comprising:

  • using as said temperature gradient furnace a temperature gradient furnace provided with heat insulating walls surrounding an outer circumference of said columnar workpiece, a heating unit for heating a bottom end of said columnar workpiece through a heating susceptor, and a cooling unit for cooling a top end of said columnar workpiece through a cooling susceptor;

    stacking, inside said furnace in order from the bottom, a source material rod comprised of silicon carbide, a solvent, a seed crystal, and a support rod supporting said seed crystal at its bottom end so as to form said columnar workpiece, heating a bottom end of said source material rod as said bottom end of the columnar workpiece by said heating unit, and cooling a top end of said support rod as said top end of the columnar workpiece by said cooling unit so as to form a temperature gradient inside said columnar workpiece so that the top end face becomes lower in temperature than the bottom end face of said solvent; and

    causing a silicon carbide single crystal to grow continuously downwardly starting from said seed crystal, wherein said method further comprises;

    using an inside cylindrical susceptor tightly surrounding the outer circumference of said columnar workpiece.

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