Method of production of silicon carbide single crystal
First Claim
1. A method of production of a silicon carbide single crystal by precipitation from a solution using a temperature gradient furnace giving a temperature gradient to a columnar workpiece in its longitudinal direction, comprising:
- using as said temperature gradient furnace a temperature gradient furnace provided with heat insulating walls surrounding an outer circumference of said columnar workpiece, a heating unit for heating a bottom end of said columnar workpiece through a heating susceptor, and a cooling unit for cooling a top end of said columnar workpiece through a cooling susceptor;
stacking, inside said furnace in order from the bottom, a source material rod comprised of silicon carbide, a solvent, a seed crystal, and a support rod supporting said seed crystal at its bottom end so as to form said columnar workpiece, heating a bottom end of said source material rod as said bottom end of the columnar workpiece by said heating unit, and cooling a top end of said support rod as said top end of the columnar workpiece by said cooling unit so as to form a temperature gradient inside said columnar workpiece so that the top end face becomes lower in temperature than the bottom end face of said solvent; and
causing a silicon carbide single crystal to grow continuously downwardly starting from said seed crystal, wherein said method further comprises;
using an inside cylindrical susceptor tightly surrounding the outer circumference of said columnar workpiece.
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Abstract
A method of production of a silicon carbide single crystal enabling fast, stable, and continuous growth of a high quality silicon carbide single crystal and enabling both an increase in size of the bulk single crystal and an improvement of quality of a thin film single crystal, comprising stacking, in order from the bottom, a silicon carbide source material rod, a solvent, a seed crystal, and a support rod supporting the seed crystal at its bottom end so as to form a columnar workpiece, heating a bottom end of the source material rod as a bottom end of the columnar workpiece, and cooling a top end of the support rod as the top end of the columnar workpiece so as to form a temperature gradient inside the columnar workpiece so that the top end face becomes lower in temperature than the bottom end face of the solvent; and causing a silicon carbide single crystal to grow continuously downwardly starting from the seed crystal, wherein said method further comprises using an inside cylindrical susceptor tightly surrounding the outer circumference of the columnar workpiece.
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Citations
11 Claims
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1. A method of production of a silicon carbide single crystal by precipitation from a solution using a temperature gradient furnace giving a temperature gradient to a columnar workpiece in its longitudinal direction, comprising:
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using as said temperature gradient furnace a temperature gradient furnace provided with heat insulating walls surrounding an outer circumference of said columnar workpiece, a heating unit for heating a bottom end of said columnar workpiece through a heating susceptor, and a cooling unit for cooling a top end of said columnar workpiece through a cooling susceptor;
stacking, inside said furnace in order from the bottom, a source material rod comprised of silicon carbide, a solvent, a seed crystal, and a support rod supporting said seed crystal at its bottom end so as to form said columnar workpiece, heating a bottom end of said source material rod as said bottom end of the columnar workpiece by said heating unit, and cooling a top end of said support rod as said top end of the columnar workpiece by said cooling unit so as to form a temperature gradient inside said columnar workpiece so that the top end face becomes lower in temperature than the bottom end face of said solvent; and
causing a silicon carbide single crystal to grow continuously downwardly starting from said seed crystal, wherein said method further comprises;
using an inside cylindrical susceptor tightly surrounding the outer circumference of said columnar workpiece. - View Dependent Claims (2, 3, 4, 8, 9, 10)
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5. A method of production of a silicon carbide single crystal by precipitation from a solution using a temperature gradient furnace giving a temperature gradient to a columnar workpiece in its longitudinal direction, comprising:
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using as said temperature gradient furnace a temperature gradient furnace provided with heat insulating walls surrounding an outer circumference of said columnar workpiece, a heating unit for heating a bottom end of said columnar workpiece through a heating susceptor, and a cooling unit for cooling a top end of said columnar workpiece through a cooling susceptor;
stacking, inside said furnace in order from the bottom, a source material rod comprised of silicon carbide, a solvent, a seed crystal, and a support rod supporting said seed crystal at its bottom end so as to form said columnar workpiece, heating a bottom end of said source material rod as said bottom end of the columnar workpiece by said heating unit, and cooling a top end of said support rod as said top end of the columnar workpiece by said cooling unit so as to form a temperature gradient inside said columnar workpiece so that the top end face becomes lower in temperature than the bottom end face of said solvent; and
causing a silicon carbide single crystal to grow continuously downwardly starting from said seed crystal, wherein said method further comprises;
using as said source material rod a source material rod provided with a counter bore of an inside diameter equal to an outside diameter of said seed crystal on the top face and pulling said support rod at the time where a predetermined thickness of the single crystal is grown so as to remove said single crystal from said solvent. - View Dependent Claims (6, 7, 11)
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Specification