Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof
First Claim
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1. A contact fabric using a heterostructure of metal/semiconductor nanorods, the contact fabric comprising:
- semiconductor nanorods grown on a predetermined base material; and
metal deposited on predetermined portions of the semiconductor nanorods, wherein there is a low contact resistance ohmic characteristic or a rectifying Schottky characteristic between the nanorods and the metal depending on characteristics of interfaces between the nanorods and the metal and depending on the difference between work functions.
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Abstract
Provided are a contact fabric using a heterostructure of metal/semiconductor nanorods and a method of manufacturing the same. An ohmic contact fabric having a low contact resistance or a Schottky contact fabric having a rectification characteristic is formed by selectively depositing metal of nano-sizes onto predetermined portions of zinc oxide/semiconductor nanorods and controlling the work function of the deposited metal and the interfacial characteristics of metal/zinc oxide. The contact fabric can be applied to various nano-sized electronic devices, including Schottky diodes, optical devices, and arrays thereof.
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15 Claims
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1. A contact fabric using a heterostructure of metal/semiconductor nanorods, the contact fabric comprising:
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semiconductor nanorods grown on a predetermined base material; and
metal deposited on predetermined portions of the semiconductor nanorods, wherein there is a low contact resistance ohmic characteristic or a rectifying Schottky characteristic between the nanorods and the metal depending on characteristics of interfaces between the nanorods and the metal and depending on the difference between work functions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a contact fabric using a heterostructure of metal/semiconductor nanorods, the method comprising:
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growing semiconductor nanorods on a predetermined base material vertically or in a direction; and
depositing a metal onto predetermined portions of the semiconductor nanorods using a sputtering method or a thermal or e-beam evaporation method, wherein there is a low contact resistance ohmic characteristic or a rectifying Schottky characteristic between the nanorods and the metal depending on characteristics of interfaces between the nanorods and the metal and depending on the difference between work functions. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification