Method of repairing a short defect and a method of fabricating a liquid crystal display device

• US 20070000431A1
• Filed: 06/02/2006
• Published: 01/04/2007
• Est. Priority Date: 06/30/2005
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Yoo, Soon, Cho, Heung
• Granted Patent: US 7,649,609 B2
• Time in Patent Office: Days
• US Class Current: 117/73
• CPC Class Codes: G02F 1/136259 Repairing; Defects

Abstract

A method for repairing a short defect according to the present invention includes forming a first conductive pattern on a substrate, forming a photo-resist pattern on the first conductive pattern using a rear exposure for the first conductive pattern being shorted by a residue pattern, and removing the residue pattern exposed through the photo-resist pattern.

Claims

1. A method for repairing a short defect for a liquid crystal display device, comprising:

forming a first conductive pattern on a substrate;

forming a photo-resist pattern on the first conductive pattern using a rear exposure for the first conductive pattern being shorted by a residue pattern; and

removing the residue pattern exposed through the photo-resist pattern.

2. The method according to claim 1, wherein forming the photo-resist pattern includes:

coating a photo-resist on the first conductive pattern; and

forming the photo-resist pattern by rear-exposing the photo-resist.

3. The method according to claim 1, wherein the residue pattern has a line width equal to or less than a resolution level of the rear exposure.

4. A method of fabricating a liquid crystal display device, comprising:

forming a gate line and a common line on a substrate;

forming a photo-resist pattern on the gate line and the common line using a rear exposure for the gate line and the common line being shorted by a residue pattern; and

removing the residue pattern exposed through the photo-resist pattern.

5. The method according to claim 4, wherein the residue pattern has a line width not greater than a resolution level of the rear exposure.

6. The method according to claim 4, wherein forming the photo-resist pattern includes:

forming a photo-resist on a substrate where the gate line and the common line are formed; and

forming the photo-resist pattern by the rear exposure using the gate line and the common line as a mask.

7. The method according to claim 4, wherein the residue pattern has a line width equal to or less than about 4 μ

m.