Multi-parameter sensor with readout circuit

• US 20070000778A1
• Filed: 06/30/2005
• Published: 01/04/2007
• Est. Priority Date: 06/30/2005
• Status: Abandoned Application

• Current Assignee: Chung-Yuan Christian University
• Original Assignee: Chung-Yuan Christian University
• Inventors: Sun, Tai-Ping, Chou, Jung-Chuan, Liao, Han-Chou, Hsiung, Shen-kan
• Application Number:
  US11/171,115
• Publication Number:
  US 20070000778A1
• Time in Patent Office: Days
• US Class Current: 204/419
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

The present discloses an ion sensor and its readout circuit. The sensor includes potentiometric, amperometric ion sensors or dual mode electrochemical sensor. The dual mode electrochemical sensors can be measured by the same measurement circuit system. The dual mode sensors are extended gate ion sensitive field effect transistors and amperometric biosensors. The measurement circuit system is adaptable to the different mode sensors.

Claims

1. A sensor, comprising:

a substrate;

a conductive film formed on said substrate;

a sensing film formed on said conductive film;

an isolating layer covered on partial of said sensing film such that non-covered region of said sensing film is capable of contacting with a measurement substance; and

a measurement circuit coupled to said conductive film to obtain the sensing signals.

2. The sensor of claim 1, wherein said measurement circuit comprises a potentiometric measurement circuit, an amperometric measurement circuit or a dual mode measurement circuit.

3. The sensor of claim 1, wherein said substrate comprises a glass substrate, a silicon substrate or a ceramic substrate.

4. The sensor of claim 1, wherein said sensing film comprises an ammonium ion-sensing membrane, a potassium ion-sensing membrane, a sodium ion-sensing membrane or a calcium ion-sensing membrane.

5. The sensor of claim 1, wherein said conductive film is formed by a sputtering method.

6. The sensor of claim 5, wherein process parameters of said sputtering comprise a power greater than 10 watt, a temperature higher than zero centigrade degree and pressure from about 20 mTorr to 200 mTorr.

7. The sensor of claim 1, wherein material of said isolating layer comprises resin, compound, epoxy, silicone, silicone rubber, silicone resin, elastic PU, porous PU, acrylic rubber, blue tape or UV tape.

8. The sensor of claim 1, wherein said conductive film comprises ITO (indium tin oxide).

9. The sensor of claim 1, wherein said sensing film comprises SnO₂.

10. The sensor of claim 1, wherein said sensor comprises pH sensor, ammonium sensor, potassium sensor, sodium sensor or calcium sensor.

11. The sensor of claim 1, further comprising a reference electrode coupled to said measurement circuit.

12. The sensor of claim 1, wherein said measurement circuit comprises:

a first operation amplifier;

a resistor coupled to a feedback circuit of said first operation amplifier;

a working electrode coupled to a negative electrode of said first operation amplifier;

a second operation amplifier, wherein an output terminal of said second operation amplifier is coupled to a counter electrode and a negative electrode of said second operation amplifier is coupled to a reference electrode;

a working voltage coupled to a positive electrode of said second operation amplifier; and

a signal output terminal coupled to an output terminal of said first operation amplifier.

13. The sensor of claim 12, wherein material of said reference electrode and said counter electrode comprises Ag or AgCl.

14. The sensor of claim 1, wherein said measurement circuit comprises an instrumentation amplifier.

15. The sensor of claim 14, wherein said measurement circuit comprises an adjustable resistor coupled to said instrumentation amplifier.

16. The sensor of claim 1, wherein said measurement circuit comprises:

a first operation amplifier;

a resistor coupled to a feedback circuit of said first operation amplifier;

a switch coupled to said resistor;

a working electrode coupled to a negative electrode of said first operation amplifier;

a second operation amplifier, wherein an output terminal of said second operation amplifier is coupled to a counter electrode and a positive electrode of said second operation amplifier is coupled to a reference electrode;

a working voltage coupled to a negative electrode of said second operation amplifier; and

a signal output terminal coupled to an output terminal of said first operation amplifier.