Bonding apparatus and method

• US 20070000878A1
• Filed: 06/30/2006
• Published: 01/04/2007
• Est. Priority Date: 06/30/2005
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Shinkawa
• Original Assignee: Kabushiki Kaisha Shinkawa
• Inventors: Maeda, Toru, Fujita, Kazuo
• Granted Patent: US 7,576,297 B2
• Time in Patent Office: Days
• US Class Current: 219/121.110
• CPC Class Codes: B23K 20/005 Capillary welding
• CPC Class Codes: B23K 2101/32 Wires
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/7801 Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
• CPC Class Codes: H01L 2224/78252 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
• CPC Class Codes: H01L 2224/78301 Capillary
• CPC Class Codes: H01L 2224/786 Means for supplying the connector to be connected in the bonding apparatus
• CPC Class Codes: H01L 2224/7865 Means for transporting the components to be connected
• CPC Class Codes: H01L 2224/85009 Pre-treatment of the connector or the bonding area
• CPC Class Codes: H01L 2224/85013 Plasma cleaning
• CPC Class Codes: H01L 2224/851 the connector being supplied to the parts to be connected in the bonding apparatus
• CPC Class Codes: H01L 2224/85181 : connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
• CPC Class Codes: H01L 2224/85201 : Compression bonding
• CPC Class Codes: H01L 2224/85203 : Thermocompression bonding
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A bonding apparatus including a capillary 40 having a high-frequency coil 50 on its tip end portion and allowing a bonding wire 2 to pass therethrough, a position changing unit for changing the position of the tip of the bonding wire, a gas supply unit for supplying gas into the capillary, and a high-frequency power supply unit for supplying high-frequency power to the high-frequency coil. When the bonding wire is outside a plasma region 52 in the capillary, a microplasma generated in the plasma region is ejected out of the capillary and removes foreign matter or contaminants on the surface of a bonding subject. When the bonding wire is inside the plasma region, the material of the bonding wire is turned into fine particles, and a microplasma 303 containing sputtered fine particles is ejected from the capillary, allowing the material the same as the bonding wire to be deposited on the bonding subject.

Claims

1. A bonding apparatus comprising:

a bonding processor for executing a bonding process on a bonding subject using a bonding tool;

a plasma capillary having a high-frequency coil wound on a tip end portion thereof;

an inductively coupled microplasma generator including the plasma capillary and for performing a surface treatment on the bonding subject by ejecting gas being a plasma in an interior of the plasma capillary by supply of electric power to the high-frequency coil of the plasma capillary, from an opening at a tip end portion of the plasma capillary onto the bonding subject;

a position changing unit for changing positions a tip of a thin wire being made of a prescribed material inserted the interior of the plasma capillary between a surface removal position being outside of a plasma region and a surface deposition position being inside of the plasma region in the interior of the plasma capillary; and

a controller for depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in the inductively coupled microplasma generator by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the inductively coupled microplasma generator by controlling the position changing unit.

2. A bonding apparatus comprising:

a capillary being tubular and made of an insulating material, the capillary being provided with a high-frequency coil wound on an outer circumference of a tip end portion of the capillary and being supplied of high-frequency electric power thereto, and the capillary allowing a bonding wire to insert into an interior thereof;

a gas supply unit for supplying gas to an interior of the capillary;

a position changing unit for changing positions of a tip position of the bonding wire; and

a controller for controlling a wire bonding processing.

3. A bonding apparatus comprising:

a bonding processor for executing a bonding process on a bonding subject using a bonding arm having a bonding capillary;

a plasma capillary for performing a surface treatment on the bonding subject and having a high-frequency coil wound on a tip end portion thereof, the plasma capillary ejecting gas being a plasma in an interior thereof by supply of electric power to the high-frequency coil thereof, from an opening at a tip end portion thereof onto the bonding subject;

a plasma processor for performing the surface treatment on the bonding subject using a plasma arm having the plasma capillary at a tip end thereof;

a position changing unit for changing positions a tip of a thin wire being made of a prescribed material inserted the interior of the plasma capillary between a surface removal position being outside of a plasma region and a surface deposition position being inside of the plasma region in the interior of the plasma capillary; and

a controller for interconnectedly controlling actions of the bonding arm and actions of the plasma arm.

4. The bonding apparatus according to claim 3, wherein:

the bonding processor performs the bonding processing on a bonding subject held in a bonding stage;

the plasma processor performs a surface treatment on a bonding subject which is of the same type as a bonding subject processed by the bonding processor and which is held in a surface treatment stage; and

the controller effects control causing the bonding processing and the surface treatment to be interconnectedly performed, respectively, at the same sites in bonding subjects of the same type.

5. The bonding apparatus according to claim 3, wherein:

the controller effects control for interconnectedly executing the bonding process and the surface treatment on the same bonding subject.

6. The bonding apparatus according to claim 5, wherein:

the controller effects control for causing the bonding arm and the plasma arm to move as a unit.

7. A bonding method using a bonding apparatus, comprising:

providing a bonding apparatus, the bonding apparatus comprising;

a bonding processor for executing a bonding process on a bonding subject using a bonding tool,

a plasma capillary having a high-frequency coil wound on a tip end portion thereof,

an inductively coupled microplasma generator including the plasma capillary and for performing a surface treatment on the bonding subject by ejecting gas being a plasma in an interior of the plasma capillary by supply of electric power to the high-frequency coil of the plasma capillary, from an opening at a tip end portion of the plasma capillary onto the bonding subject,

a position changing unit for changing positions of a tip position of thin wire being made of a prescribed material inserted the interior of the plasma capillary between a surface removal position being outside of a plasma region and a surface deposition position being inside of the plasma region in the interior of the plasma capillary, and

a controller for depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in the inductively coupled microplasma generator by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the inductively coupled microplasma generator by controlling the position changing unit;

changing positions of the tip of the thin wire inserted the interior of the plasma capillary between

a surface removal position where the tip of the thin wire being positioned outside the plasma region, and

a surface deposition position where the tip of the thin wire being positioned inside the plasma region;

depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in the interior of the plasma capillary by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the interior of the plasma capillary by controlling the position changing unit;

then

executing the bonding process onto a site depositing the prescribed material by the bonding processor.

8. A bonding method using a bonding apparatus, comprising:

providing a bonding apparatus, the bonding apparatus comprising;

a capillary being tubular and made of an insulating material, the capillary being provided with a high-frequency coil wound on an outer circumference of a tip end portion of the capillary and being supplied of high-frequency electric power thereto, and the capillary allowing a bonding wire to insert into an interior thereof,

a gas supply unit for supplying gas to an interior of the capillary,

a position changing unit for changing positions of a tip position of the bonding wire, and

a controller for controlling a wire bonding processing;

changing positions of the tip position of the bonding wire inserted into the capillary among

a bonding process position for effecting wire bonding,

a surface removal position where the tip of the bonding wire being positioned outside the plasma region, and

a surface deposition position where the tip of the bonding wire being positioned inside the plasma region;

depositing the material of the bonding wire on the bonding subject to move positions of the tip of the bonding wire to the surface deposition position in the interior of the capillary by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the bonding wire to the surface removal position in the interior of the capillary by controlling the position changing unit;

then

executing the bonding process onto a site depositing the material of the bonding wire.

9. A bonding method using a bonding apparatus, comprising:

providing a bonding apparatus, the bonding apparatus comprising;

a bonding processor for executing a bonding process on a bonding subject using a bonding arm having a bonding capillary,

a plasma capillary for performing a surface treatment on the bonding subject and having a high-frequency coil wound on a tip end portion thereof, the plasma capillary ejecting gas being a plasma in an interior thereof by supply of electric power to the high-frequency coil thereof, from an opening at a tip end portion thereof onto the bonding subject,

a plasma processor for performing the surface treatment on the bonding subject using a plasma arm having the plasma capillary at a tip end thereof,

a position changing unit for changing positions a tip of a thin wire being made of a prescribed material inserted the interior of the plasma capillary between a surface removal position being outside of a plasma region and a surface deposition position being inside of the plasma region in the interior of the plasma capillary, and

a controller for interconnectedly controlling actions of the bonding arm and actions of the plasma arm;

changing positions of the tip of the thin wire inserted the interior of the plasma capillary between

a surface removal position where the tip of the thin wire being positioned outside the plasma region, and

a surface deposition position where the tip of the thin wire being positioned inside the plasma region; and

depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in the interior of the plasma capillary by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the interior of the plasma capillary by controlling the position changing unit;

then

executing the bonding process onto a site depositing the prescribed material by the bonding processor.

10. A bonding method comprising the step of:

providing a bonding processor for executing a bonding process on a bonding subject using a bonding tool;

providing a plasma capillary having a high-frequency coil wound on a tip end portion thereof;

providing an inductively coupled microplasma generator including the plasma capillary and for performing a surface treatment on the bonding subject by ejecting gas being a plasma in an interior of the plasma capillary by supply of electric power to the high-frequency coil of the plasma capillary, from an opening at a tip end portion of the plasma capillary onto the bonding subject;

providing a position changing unit for changing positions of a tip of a thin wire being made of a prescribed material inserted the interior of the plasma capillary between a surface removal position being outside of a plasma region and a surface deposition position being inside of the plasma region in the interior of the plasma capillary;

providing a controller for depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in the inductively coupled microplasma generator by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the inductively coupled microplasma generator by controlling the position changing unit;

changing positions of the tip of the thin wire inserted the interior of the plasma capillary between

a surface removal position where the tip of the thin wire being positioned outside the plasma region, and

a surface deposition position where the tip of the thin wire being positioned inside the plasma region;

depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in tile interior of the plasma capillary by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the interior of the plasma capillary by controlling the position changing unit;

than

executing the bonding process onto a site depositing the prescribed material by the bonding processor.

11. A bonding method comprising the step of:

providing a capillary being tubular and made of an insulating material, the capillary being provided with a high-frequency coil wound on an outer circumference of a tip end portion of the capillary and being supplied of high-frequency electric power thereto, and the capillary allowing a bonding wire to insert into an interior thereof;

providing a gas supply unit for supplying gas to an interior of the capillary;

providing a position changing unit for changing positions of a tip position of the bonding wire;

providing a controller for controlling a wire bonding processing;

changing positions of the tip position of the bonding wire inserted into the capillary among

a bonding process position for effecting wire bonding,

a surface removal position where the tip of the bonding wire being positioned outside the plasma region, and

a surface deposition position where the tip of the bonding wire being positioned inside the plasma region;

depositing the material of the bonding wire on the bonding subject to move positions of the tip of the bonding wire to the surface deposition position in the interior of the capillary by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the bonding wire to the surface removal position in the interior of the capillary by controlling the position changing unit;

then

executing the bonding process onto a site depositing the material of the bonding wire.

12. A bonding method comprising the step of:

providing a bonding processor for executing a bonding process on a bonding subject using a bonding arm having a bonding capillary;

providing a plasma capillary for performing a surface treatment on the bonding subject and having a high-frequency coil wound on a tip end portion thereof, the plasma capillary ejecting gas being a plasma in an interior thereof by supply of electric power to the high-frequency coil thereof, from an opening at a tip end portion thereof onto the bonding subject;

providing a plasma processor for performing the surface treatment on the bonding subject using a plasma arm having the plasma capillary at a tip end thereof,

providing a position changing unit for changing positions a tip of a thin wire being made of a prescribed material inserted the interior of the plasma capillary between a surface removal position being outside of a plasma region and a surface deposition position being inside of the plasma region in the interior of the plasma capillary;

providing a controller for interconnectedly controlling actions of the bonding arm and actions of the plasma arm;

changing positions of the tip of the thin wire inserted the interior of the plasma capillary between

a surface removal position where the tip of the thin wire being positioned outside the plasma region, and

a surface deposition position where the tip of the thin wire being positioned inside the plasma region;

depositing the prescribed material on the bonding subject to move positions of the tip of the thin wire to the surface deposition position in the interior of the plasma capillary by controlling the position changing unit after removing foreign matter or contaminants of a surface on the bonding subject to move positions of the tip of the thin wire to the surface removal position in the interior of the plasma capillary by controlling the position changing unit;

then

executing the bonding process onto a site depositing the prescribed material by the bonding processor.