Versatile system for restricting movement of MEMS structures

• US 20070001542A1
• Filed: 06/30/2005
• Published: 01/04/2007
• Est. Priority Date: 06/30/2005
• Status: Abandoned Application

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Neidrich, Jason
• Application Number:
  US11/172,348
• Publication Number:
  US 20070001542A1
• Time in Patent Office: Days
• US Class Current: 310/309
• CPC Class Codes: B81B 3/0054 For holding or placing an element in a given position
• CPC Class Codes: H02N 1/006 of the gap-closing type H02N1/004 takes precedence

Abstract

The present invention provides a system for selectively restricting movement of a MEMS device (200). The system of the present invention provides a device comprising movable MEMS device structure (222) and a fixed gate structure (218). A latch structure (248) is formed or otherwise disposed along the MEMS device structure, in proximity to the gate structure. A locking electrode (212) is disposed or formed in proximity to the gate structure, and is adapted to force the latch structure into engagement with the gate structure responsive to an activation signal. Circuitry (202) provides the activation signal to the locking electrode.

Claims

1. A micro-electromechanical device comprising:

a movable first structure;

a gate structure;

a latch structure, disposed along the movable first structure in proximity to the gate structure; and

a locking signal element, adapted to force the latch structure into engagement with the gate structure.

2. The device of claim 1, wherein the micro-electromechanical device comprises a digital micromirror device.

3. The device of claim 1, wherein the movable first, gate and latch structures are planar.

4. The device of claim 1, wherein the movable first, gate and latch structures are formed of metal.

5. The device of claim 1, further comprising a plurality of gate structures.

6. The device of claim 1, wherein the gate structure comprises a plurality of gate elements.

7. The device of claim 1, wherein the gate structure comprises a spline.

8. The device of claim 1, wherein the gate structure is interposed between the movable first structure and the locking signal element.

9. The device of claim 1, wherein the locking signal element comprises an electrode.

10. The device of claim 1, wherein the locking signal element is adapted to supply force sufficient to move the movable first structure force and to force the latch structure into engagement with gate structure.

11. The device of claim 1, wherein the locking signal element is adapted to supply force sufficient only to force the latch structure into engagement with gate structure.

12. A method of restricting movement of a movable micro-electromechanical device structure, the method comprising the steps of:

providing a first movable micro-electromechanical device structure;

providing a gate structure;

providing a latch structure, disposed along the first movable micro-electromechanical device structure in proximity to the gate structure;

providing a locking signal element, adapted to force the latch structure into engagement with the gate structure responsive to an activation signal;

providing the activation signal to force the latch structure into engagement with the gate structure; and

terminating the activation signal.

13. The method of claim 12, wherein the step of providing a locking signal element further comprises providing a locking signal element adapted to force the latch structure into engagement with the gate structure responsive to an activation signal, and to free the latch structure from engagement with the gate structure responsive to a deactivation signal.

14. The method of claim 12, wherein the step of providing a first movable micro-electromechanical device structure further comprises providing a digital micromirror device structure.

15. The method of claim 12, wherein the step of providing a first movable micro-electromechanical device structure further comprises producing a first movable micro-electromechanical device structure using semiconductor fabrication processes.

16. The method of claim 12, wherein the step of providing a gate structure further comprises producing a gate structure using semiconductor fabrication processes.

17. The method of claim 12, wherein the step of providing a latch structure further comprises producing a latch structure using semiconductor fabrication processes.

18. The method of claim 12, wherein the step of providing a locking signal element further comprises producing a locking signal element using semiconductor fabrication processes.

19. The method of claim 12, wherein the step of providing the activation signal to force the latch structure into engagement with the gate structure further comprises providing the activation signal only once.

20. The method of claim 12, wherein the step of providing the activation signal to force the latch structure into engagement with the gate structure further comprises providing the activation signal more than once.

21. A system for selectively restricting movement of a MEMS device structure, the system comprising:

a movable MEMS device structure;

a fixed gate structure;

a latch structure, formed or disposed along the movable MEMS structure in proximity to the fixed gate structure;

a locking electrode, adapted to force the latch structure into engagement with the fixed gate structure responsive to an activation signal, and to free the latch structure from engagement with the fixed gate structure responsive to a deactivation signal; and

circuitry to provide the activation or deactivation signal to the locking electrode.