Apparatus and methods for reducing non-cyclic non-linear errors in interferometry

• US 20070002330A1
• Filed: 06/22/2006
• Published: 01/04/2007
• Est. Priority Date: 06/29/2005
• Status: Active Grant

• Current Assignee: Zygo Corporation (Ametek Incorporated)
• Original Assignee: Zygo Corporation (Ametek Incorporated)
• Inventors: Hill, Henry
• Granted Patent: US 7,528,962 B2
• Time in Patent Office: Days
• US Class Current: 356/498
• CPC Class Codes: G01B 2290/70 Using polarization in the interferometer
• CPC Class Codes: G01B 9/02018 Multipass interferometers, e.g. double-pass
• CPC Class Codes: G01B 9/02061 Reduction or prevention of effects of tilts or misalignment
• CPC Class Codes: G03F 7/70775 Position control, e.g. interferometers or encoders for determining the stage position

Abstract

In general, in one aspect, the invention features interferometry systems that include an interferometer configured to direct a first beam and a second beam derived from common light source along different paths and to combine the two beams to form an output beam including information related to an optical path difference between the different paths, wherein the path of the first beam contacts a measurement object. The interferometry systems also include an afocal system positioned in the path of the first beam and configured to increase a dimension of the first beam as it propagates from the interferometer towards the measurement object and reduces the dimension of the first beam as it returns from the measurement object propagating towards the interferometer.

Claims

1. An interferometry system, comprising:

an interferometer configured to direct a first beam and a second beam derived from common light source along different paths and to combine the two beams to form an output beam having a phase related to an optical path difference between the different paths, wherein the path of the first beam contacts a measurement object; and

an assembly positioned in the path of the first beam and configured to reduce a shear of the first beam caused by a variation in the orientation of the measurement object relative to the interferometer as it propagates within the interferometer after contacting the measurement object.

2. The interferometry system of claim 1, wherein the assembly comprises an afocal system.

3. The interferometry system of claim 1, wherein the assembly changes a dimension of the first beam relative to the first beam'"'"'s dimension as it exits the interferometer.

4. The interferometry system of claim 1, wherein the assembly changes the diameter of the first beam relative to the first beam'"'"'s diameter as it exits the interferometer.

5. The interferometry system of claim 1, further comprising a detector configured to monitor the intensity of a component of the output beam.

6. The interferometry system of claim 1, further comprising an electronic controller configured so that during operation of the interferometry system the electronic controller monitors variations in the position of the measurement object relative to the interferometer based on the phase of the output beam.

7. The interferometry system of claim 6, wherein the reduction in shear of the first beam due to the assembly reduces related non-cyclic non-linear errors associated with the phase of the output beam.

8. The interferometry system of claim 1, wherein the path of the first beam contacts the measurement object more than once.

9. The interferometry system of claim 1, wherein the assembly is positioned in the path of the first beam for each pass of the first beam to the measurement object.

10. The interferometry system of claim 1, wherein the interferometer is a high stability plane mirror interferometer.

11. The interferometry system of claim 1, wherein the measurement object comprises a plane mirror.

13. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage for supporting the wafer;

an illumination system for imaging spatially patterned radiation onto the wafer;

a positioning system for adjusting the position of the stage relative to the imaged radiation; and

the interferometry system of claim 1 for monitoring the position of the wafer relative to the imaged radiation.

14. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage for supporting the wafer; and

an illumination system including a radiation source, a mask, a positioning system, a lens assembly, and the interferometry system of claim 1,

wherein during operation the source directs radiation through the mask to produce spatially patterned radiation, the positioning system adjusts the position of the mask relative to the radiation from the source, the lens assembly images the spatially patterned radiation onto the wafer, and the multi-axis interferometry system monitors the position of the mask relative to the radiation from the source.

15. A beam writing system for use in fabricating a lithography mask, the system comprising:

a source providing a write beam to pattern a substrate;

a stage supporting the substrate;

a beam directing assembly for delivering the write beam to the substrate;

a positioning system for positioning the stage and beam directing assembly relative one another; and

the interferometry system of claim 1 for monitoring the position of the stage relative to the beam directing assembly.

16. A lithography method for use in fabricating integrated circuits on a wafer, the method comprising:

supporting the wafer on a moveable stage;

imaging spatially patterned radiation onto the wafer;

adjusting the position of the stage; and

monitoring the position of the stage using the interferometry system of claim 1.

17. A lithography method for use in the fabrication of integrated circuits comprising:

directing input radiation through a mask to produce spatially patterned radiation;

positioning the mask relative to the input radiation;

monitoring the position of the mask relative to the input radiation using the interferometry system of claim 1;

and

imaging the spatially patterned radiation onto a wafer.

18. A lithography method for fabricating integrated circuits on a wafer comprising:

positioning a first component of a lithography system relative to a second component of a lithography system to expose the wafer to spatially patterned radiation; and

monitoring the position of the first component relative to the second component using the interferometry system of claim 1.

19. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography method of claim 16;

and

producing an integrated circuit from the wafer.

20. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography method of claim 17;

and

producing an integrated circuit from the wafer.

21. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography method of claim 18;

and

producing an integrated circuit from the wafer.

22. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography system of claim 13;

and

producing an integrated circuit from the wafer.

23. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography system of claim 14;

and

producing an integrated circuit from the wafer.

24. A method for fabricating a lithography mask, the method comprising:

directing a write beam to a substrate to pattern the substrate;

positioning the substrate relative to the write beam; and

monitoring the position of the substrate relative to the write beam using the interferometry system of claim 1.

12. An interferometry system, comprising:

an interferometer configured to direct a first beam and a second beam derived from common light source along different paths and to combine the two beams to form an output beam having a phase related to an optical path difference between the different paths, wherein the path of the first beam contacts a measurement object; and

an afocal system positioned in the path of the first beam between the interferometer and the measurement object and configured to change a diameter of the first beam relative to the first beam'"'"'s diameter as it exits the interferometer propagating towards the measurement object.

25. An interferometry system, comprising:

an interferometer configured to direct a first beam and a second beam derived from common light source along different paths and to combine the two beams to form an output beam including information related to an optical path difference between the different paths, wherein the path of the first beam contacts a measurement object; and

an afocal system positioned in the path of the first beam and configured to increase a dimension of the first beam as it propagates from the interferometer towards the measurement object and reduces the dimension of the first beam as it returns from the measurement object propagating towards the interferometer.

26. The interferometry system of claim 25, wherein the afocal system reduces a contribution of wavefront errors to the information introduced to the first beam by the interferometer after the first beam contacts from the measurement object.

27. The interferometry system of claim 25, wherein the path of the first beam contacts the measurement object more than once.

28. The interferometry system of claim 27, further comprising a second afocal system positioned in the path of the first beam along which the first beam propagates as it makes a second pass to the measurement object.

29. The interferometry system of claim 28, wherein the second afocal system is configured to increase the dimension of the first beam as it propagates from the interferometer towards the measurement object for the second time and reduces the dimension of the first beam as it returns from the measurement object propagating towards the interferometer.

30. The interferometry system of claim 29, wherein the afocal systems reduce the dimension of the first beam by substantially the same amount.

31. The interferometry system of claim 25, wherein the dimension is the beam radius along one axis.

32. The interferometry system of claim 25, wherein the dimension is the beam radius along two orthogonal axes.