Method of manufacturing a polymer memory device

• US 20070003695A1
• Filed: 06/30/2005
• Published: 01/04/2007
• Est. Priority Date: 06/30/2005
• Status: Abandoned Application

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Tregub, Alexander, Leeson, Michael, Rockford, Lee
• Application Number:
  US11/174,129
• Publication Number:
  US 20070003695A1
• Time in Patent Office: Days
• US Class Current: 427/240
• CPC Class Codes: G11C 11/22 using ferroelectric elements
• CPC Class Codes: H10B 53/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Abstract

An embodiment of the invention is a method of manufacturing a polymer for a polymer ferroelectric memory. In particular, and among other features, the method of an embodiment alters the ferroelectric transition temperature, or Curie temperature, of the polymer by rapidly cooling the polymer from an elevated temperature. In particular, an embodiment increases the Curie temperature of the polymer, expanding the operating range of a polymer ferroelectric memory formed therewith.

Claims

1. A method comprising:

heating a ferroelectric polymer above its melting point; and

quenching the ferroelectric polymer.

2. The method of claim 1, quenching the ferroelectric polymer further comprising:

decreasing the temperature of the ferroelectric polymer at a rate of approximately 100°

C. per second.

3. The method of claim 1, quenching the ferroelectric polymer further comprising:

exposing the ferroelectric polymer to liquid nitrogen.

4. The method of claim 3 further comprising:

decreasing the temperature of the ferroelectric polymer to the temperature of the liquid nitrogen substantially instantaneously.

5. The method of claim 1, the ferroelectric polymer further comprising polyvinylidene fluoride.

6. The method of claim 1, the ferroelectric polymer further comprising a polyvinylidene fluoride trifluoroethylene copolymer.

7. The method of claim 6, the polyvinylidene fluoride trifluoroethylene copolymer further comprising approximately between 20 mol percent and 40 mol percent trifluoroethylene.

8. The method of claim 1 further comprising:

increasing the Curie temperature of the ferroelectric polymer.

9. A method comprising:

heating a ferroelectric polymer above its melting point; and

rapidly cooling the ferroelectric polymer at a rate of approximately 50°

C. per second.

10. The method of claim 9, rapidly cooling the ferroelectric polymer at a rate of approximately 50°

C. per second further comprising;

exposing the ferroelectric polymer to ice or ice water.

11. The method of claim 9, the ferroelectric polymer further comprising polyvinylidene fluoride.

12. The method of claim 9, the ferroelectric polymer further comprising a polyvinylidene fluoride trifluoroethylene copolymer.

13. The method of claim 12, the polyvinylidene fluoride trifluoroethylene copolymer further comprising approximately between 20 mol percent and 40 mol percent trifluoroethylene.

14. A method comprising:

spin depositing a ferroelectric polymer solution on a substrate including an electrode;

heating the ferroelectric polymer solution to remove a solvent;

rapidly cooling the ferroelectric polymer.

15. The method of claim 14 further comprising:

forming another electrode on the ferroelectric polymer

16. The method of claim 15, heating the ferroelectric polymer further comprising:

melting the ferroelectric polymer.

17. The method of claim 16, rapidly cooling the ferroelectric polymer further comprising:

quenching the ferroelectric polymer by exposing the ferroelectric polymer to liquid nitrogen.

18. The method of claim 17 wherein melting the ferroelectric polymer and quenching the ferroelectric polymer precede forming another electrode on the ferroelectric polymer.

19. The method of claim 17 wherein forming another electrode precedes melting the ferroelectric polymer and quenching the ferroelectric polymer.